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Title: Process for forming silicon carbide films and microcomponents

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.
Inventors:
 [1];  [2];  [2]
  1. (Livermore, CA)
  2. (Berkeley, CA)
Issue Date:
OSTI Identifier:
872105
Assignee:
Regents of University of California (Oakland, CA) LLNL
Patent Number(s):
US 5861346
Contract Number:
W-7405-ENG-48
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Country of Publication:
United States
Language:
English
Subject:
process; forming; silicon; carbide; films; microcomponents; grown; substrates; surface; temperatures; 900; 1700; via; 60; precursors; hydrogen-free; environment; selective; crystalline; growth; achieved; patterned; silicon-silicon; oxide; samples; sic; produced; reaction; probability; negligible; dioxide; 1250; silicon substrates; silicon carbide; silicon substrate; silicon oxide; crystalline silicon; silicon dioxide; surface temperature; surface temperatures; selective crystalline; patterned silicon; forming silicon; carbide films; /438/117/427/