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Title: Process for forming silicon carbide films and microcomponents

Abstract

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Inventors:
 [1];  [2];  [2]
  1. Livermore, CA
  2. Berkeley, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
872105
Patent Number(s):
5861346
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; forming; silicon; carbide; films; microcomponents; grown; substrates; surface; temperatures; 900; 1700; via; 60; precursors; hydrogen-free; environment; selective; crystalline; growth; achieved; patterned; silicon-silicon; oxide; samples; sic; produced; reaction; probability; negligible; dioxide; 1250; silicon substrates; silicon carbide; silicon substrate; silicon oxide; crystalline silicon; silicon dioxide; surface temperature; surface temperatures; selective crystalline; patterned silicon; forming silicon; carbide films; /438/117/427/

Citation Formats

Hamza, Alex V, Balooch, Mehdi, and Moalem, Mehran. Process for forming silicon carbide films and microcomponents. United States: N. p., 1999. Web.
Hamza, Alex V, Balooch, Mehdi, & Moalem, Mehran. Process for forming silicon carbide films and microcomponents. United States.
Hamza, Alex V, Balooch, Mehdi, and Moalem, Mehran. Fri . "Process for forming silicon carbide films and microcomponents". United States. https://www.osti.gov/servlets/purl/872105.
@article{osti_872105,
title = {Process for forming silicon carbide films and microcomponents},
author = {Hamza, Alex V and Balooch, Mehdi and Moalem, Mehran},
abstractNote = {Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

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Works referenced in this record:

Fullerene (C60) adsorption on Si surfaces
journal, April 1993


Growth of silicon carbide films via C60 precursors
journal, October 1994


Fabrication of SiC Films on Si(100) using a C60 molecular source
journal, June 1994


C58 production from dissociation of C60 by scattering from silica and highly oriented pyrolytic graphite
journal, September 1994


Synthesis of epitaxial β‐SiC by C 60 carbonization of silicon
journal, August 1995


Surface mobility of C 60 on SiO 2
journal, September 1993


Sapphire (112¯0) surface: Structure and laser-induced desorption of aluminum
journal, March 1992


The chemisorption of C60 on Si(100)-(2 × 1)
journal, January 1993


Observation of C 60 cage opening on Si(111)‐(7×7)
journal, July 1993


Double domain solid C 60 on Si(111)7×7
journal, March 1993


SiC microcomponents via reaction of C60 with silicon
journal, November 1994


Temperature effects of adsorption of C 60 molecules on Si(111)-(7×7) surfaces
journal, March 1994