Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

Feng, Zhu; Brewer, Marilee; Brown, Ian; Komvopoulos, Kyriakos

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Title: Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

Abstract

A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.

Inventors:

Feng, Zhu ^[1]; Brewer, Marilee ^[2]; Brown, Ian ^[3]; Komvopoulos, Kyriakos ^[4]

Albany, CA
Goleta, CA
Berkeley, CA
Orinda, CA

Issue Date:: 1994-01-01

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

OSTI Identifier:: 869276

Patent Number(s):: 5308661

Assignee:: Regents of University of California (Oakland, CA)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/0272 - {Deposition of sub-layers, e.g. to promote the adhesion of the main coating}
C23C16/274 - {using microwave discharges}
C23C16/277 - {using other elements in the gas phase besides carbon and hydrogen

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S427/102 - Fullerene type base or coating

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/30 - Self-sustaining carbon mass or layer with impregnant or other layer

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DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: pretreatment; process; forming; smooth; surface; diamond; film; carbon-coated; substrate; disclosed; provide; uniform; density; nucleation; sites; thereon; subsequent; deposition; continuous; application; bias; voltage; comprises; exposing; microwave; plasma; enhanced; chemical; vapor; mixture; hydrogen-methane; gases; methane; gas; concentration; measured; partial; pressure; maintaining; 10; 30; torr; methane gas; enhanced chemical; plasma enhanced; subsequent deposition; smooth surface; chemical vapor; vapor deposition; process comprises; partial pressure; bias voltage; diamond film; gas concentration; microwave plasma; treatment process; coated substrate; carbon-coated substrate; pretreatment process; nucleation sites; comprises exposing; sites thereon; ethane gas; /427/423/428/

Citation Formats


                    Feng, Zhu, Brewer, Marilee, Brown, Ian, and Komvopoulos, Kyriakos. Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate.  United States: N. p., 1994. 
        Web.

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                    Feng, Zhu, Brewer, Marilee, Brown, Ian, & Komvopoulos, Kyriakos. Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate.  United States.

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                    Feng, Zhu, Brewer, Marilee, Brown, Ian, and Komvopoulos, Kyriakos. Sat .  
        "Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate".  United States.  https://www.osti.gov/servlets/purl/869276.

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@article{osti_869276,

  title        = {Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate},

  author       = {Feng, Zhu and Brewer, Marilee and Brown, Ian and Komvopoulos, Kyriakos},

  abstractNote = {A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {1}

}

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Works referenced in this record:

Nucleation of diamond films on surfaces using carbon clusters
journal, December 1991

Meilunas, R. J.; Chang, R. P. H.; Liu, Shengzhong
Applied Physics Letters, Vol. 59, Issue 26
https://doi.org/10.1063/1.105678

Diamond Film Semiconductors
journal, October 1992

Geis, Michael W.; Angus, John C.
Scientific American, Vol. 267, Issue 4
https://doi.org/10.1038/scientificamerican1092-84

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Similar Records

Title: Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

Abstract

Citation Formats

Nucleation of diamond films on surfaces using carbon clusters journal, December 1991

Diamond Film Semiconductors journal, October 1992

Nucleation of diamond films on surfaces using carbon clusters
journal, December 1991

Diamond Film Semiconductors
journal, October 1992