Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate
Abstract
A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.
- Inventors:
-
- Albany, CA
- Goleta, CA
- Berkeley, CA
- Orinda, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 869276
- Patent Number(s):
- 5308661
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- pretreatment; process; forming; smooth; surface; diamond; film; carbon-coated; substrate; disclosed; provide; uniform; density; nucleation; sites; thereon; subsequent; deposition; continuous; application; bias; voltage; comprises; exposing; microwave; plasma; enhanced; chemical; vapor; mixture; hydrogen-methane; gases; methane; gas; concentration; measured; partial; pressure; maintaining; 10; 30; torr; methane gas; enhanced chemical; plasma enhanced; subsequent deposition; smooth surface; chemical vapor; vapor deposition; process comprises; partial pressure; bias voltage; diamond film; gas concentration; microwave plasma; treatment process; coated substrate; carbon-coated substrate; pretreatment process; nucleation sites; comprises exposing; sites thereon; ethane gas; /427/423/428/
Citation Formats
Feng, Zhu, Brewer, Marilee, Brown, Ian, and Komvopoulos, Kyriakos. Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate. United States: N. p., 1994.
Web.
Feng, Zhu, Brewer, Marilee, Brown, Ian, & Komvopoulos, Kyriakos. Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate. United States.
Feng, Zhu, Brewer, Marilee, Brown, Ian, and Komvopoulos, Kyriakos. Sat .
"Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate". United States. https://www.osti.gov/servlets/purl/869276.
@article{osti_869276,
title = {Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate},
author = {Feng, Zhu and Brewer, Marilee and Brown, Ian and Komvopoulos, Kyriakos},
abstractNote = {A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}
Works referenced in this record:
Nucleation of diamond films on surfaces using carbon clusters
journal, December 1991
- Meilunas, R. J.; Chang, R. P. H.; Liu, Shengzhong
- Applied Physics Letters, Vol. 59, Issue 26
Diamond Film Semiconductors
journal, October 1992
- Geis, Michael W.; Angus, John C.
- Scientific American, Vol. 267, Issue 4