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Title: Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

Abstract

A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.

Inventors:
 [1];  [2];  [3];  [4]
  1. Albany, CA
  2. Goleta, CA
  3. Berkeley, CA
  4. Orinda, CA
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
OSTI Identifier:
869276
Patent Number(s):
US 5308661
Assignee:
Regents of University of California (Oakland, CA)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
pretreatment; process; forming; smooth; surface; diamond; film; carbon-coated; substrate; disclosed; provide; uniform; density; nucleation; sites; thereon; subsequent; deposition; continuous; application; bias; voltage; comprises; exposing; microwave; plasma; enhanced; chemical; vapor; mixture; hydrogen-methane; gases; methane; gas; concentration; measured; partial; pressure; maintaining; 10; 30; torr; methane gas; enhanced chemical; plasma enhanced; subsequent deposition; smooth surface; chemical vapor; vapor deposition; process comprises; partial pressure; bias voltage; diamond film; gas concentration; microwave plasma; treatment process; coated substrate; carbon-coated substrate; pretreatment process; nucleation sites; comprises exposing; sites thereon; ethane gas; /427/423/428/

Citation Formats

Feng, Zhu, Brewer, Marilee, Brown, Ian, and Komvopoulos, Kyriakos. Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate. United States: N. p., 1994. Web.
Feng, Zhu, Brewer, Marilee, Brown, Ian, & Komvopoulos, Kyriakos. Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate. United States.
Feng, Zhu, Brewer, Marilee, Brown, Ian, and Komvopoulos, Kyriakos. 1994. "Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate". United States. https://www.osti.gov/servlets/purl/869276.
@article{osti_869276,
title = {Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate},
author = {Feng, Zhu and Brewer, Marilee and Brown, Ian and Komvopoulos, Kyriakos},
abstractNote = {A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.},
doi = {},
url = {https://www.osti.gov/biblio/869276}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1994},
month = {Sat Jan 01 00:00:00 EST 1994}
}

Works referenced in this record:

Nucleation of diamond films on surfaces using carbon clusters
journal, December 1991


Diamond Film Semiconductors
journal, October 1992