Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
Abstract
A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.
- Inventors:
-
- Troy, MI
- Bloomfield Hills, MI
- Issue Date:
- OSTI Identifier:
- 867232
- Patent Number(s):
- 4891330
- Application Number:
- 07/174,267
- Assignee:
- Energy Conversion Devices, Inc. (Troy, MI)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- ZB-7-060003-4
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; fabricating; n-type; p-type; microcrystalline; semiconductor; alloy; material; including; band; gap; widening; elements; doped; element; glow; discharge; deposition; process; subjecting; precursor; mixture; diluent; gas; absence; magnetic; field; sufficient; strength; induce; electron; cyclotron; resonance; precursor mixture; microcrystalline semiconductor; electron cyclotron; band gap; magnetic field; glow discharge; deposition process; material including; cyclotron resonance; sufficient strength; crystalline semiconductor; alloy material; semiconductor alloy; widening element; gap widening; p-type microcrystalline; diluent gas; widening elements; including band; fabricating doped; /438/136/148/427/
Citation Formats
Guha, Subhendu, and Ovshinsky, Stanford R. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements. United States: N. p., 1990.
Web.
Guha, Subhendu, & Ovshinsky, Stanford R. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements. United States.
Guha, Subhendu, and Ovshinsky, Stanford R. Fri .
"Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements". United States. https://www.osti.gov/servlets/purl/867232.
@article{osti_867232,
title = {Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements},
author = {Guha, Subhendu and Ovshinsky, Stanford R},
abstractNote = {A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Feb 02 00:00:00 EST 1990},
month = {Fri Feb 02 00:00:00 EST 1990}
}
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