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Title: P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

Abstract

An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

Inventors:
 [1];  [2]
  1. (Troy, MI)
  2. (Bloomfield Hills, MI)
Issue Date:
OSTI Identifier:
866730
Patent Number(s):
4775425
Application Number:
07/077,722
Assignee:
Energy Conversion Devices, Inc. (Troy, MI) OSTI
DOE Contract Number:  
Zb-7-06003-4
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
n-type; microcrystalline; semiconductor; alloy; material; including; band; gap; widening; elements; devices; utilizing; element; method; fabricating; p-type; electronic; photovoltaic; incorporating; materials; microcrystalline semiconductor; photovoltaic devices; band gap; photovoltaic device; material including; crystalline semiconductor; alloy material; semiconductor alloy; widening element; gap widening; devices incorporating; devices utilizing; p-type material; p-type microcrystalline; n-type microcrystalline; widening elements; type materials; including band; type material; /136/252/257/420/

Citation Formats

Guha, Subhendu, and Ovshinsky, Stanford R. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same. United States: N. p., 1988. Web.
Guha, Subhendu, & Ovshinsky, Stanford R. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same. United States.
Guha, Subhendu, and Ovshinsky, Stanford R. Tue . "P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same". United States. https://www.osti.gov/servlets/purl/866730.
@article{osti_866730,
title = {P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same},
author = {Guha, Subhendu and Ovshinsky, Stanford R.},
abstractNote = {An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {10}
}

Patent:

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