P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same
Abstract
An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.
- Inventors:
-
- Troy, MI
- Bloomfield Hills, MI
- Issue Date:
- OSTI Identifier:
- 866730
- Patent Number(s):
- 4775425
- Application Number:
- 07/077,722
- Assignee:
- Energy Conversion Devices, Inc. (Troy, MI)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- Zb-7-06003-4
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- n-type; microcrystalline; semiconductor; alloy; material; including; band; gap; widening; elements; devices; utilizing; element; method; fabricating; p-type; electronic; photovoltaic; incorporating; materials; microcrystalline semiconductor; photovoltaic devices; band gap; photovoltaic device; material including; crystalline semiconductor; alloy material; semiconductor alloy; widening element; gap widening; devices incorporating; devices utilizing; p-type material; p-type microcrystalline; n-type microcrystalline; widening elements; type materials; including band; type material; /136/252/257/420/
Citation Formats
Guha, Subhendu, and Ovshinsky, Stanford R. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same. United States: N. p., 1988.
Web.
Guha, Subhendu, & Ovshinsky, Stanford R. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same. United States.
Guha, Subhendu, and Ovshinsky, Stanford R. Tue .
"P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same". United States. https://www.osti.gov/servlets/purl/866730.
@article{osti_866730,
title = {P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same},
author = {Guha, Subhendu and Ovshinsky, Stanford R},
abstractNote = {An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {10}
}
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