Title: Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

Abstract

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Inventors:

Moustakas, Theodore D ^[1]; Maruska, H Paul ^[1]

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1. Annandale, NJ

Issue Date:

1985-04-02

OSTI Identifier:

865390

Patent Number(s):

4508609

Application Number:

06/535,902

Assignee:

Exxon Research & Engineering Co. (Florham Park, NJ)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/04 - characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L21/02579 - {P-type}
H01L29/868 - PIN diodes
H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/02576 - {N-type}
H01L21/02425 - {Conductive materials, e.g. metallic silicides}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C14/14 - Metallic material, boron or silicon

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
H01L21/02532 - {Silicon, silicon germanium, germanium}

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DOE Contract Number:  

XZ092191

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

method; sputtering; microcrystalline; amorphous; silicon; semiconductor; device; n-layers; sputtered; boron; phosphorous; heavily; doped; targets; constructed; layers; layer; undoped; target; semi-transparent; ohmic; electrode; heavily doped; amorphous silicon; semiconductor device; semi-transparent ohmic; ohmic electrode; silicon semiconductor; transparent ohmic; /204/136/257/