Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

Title: Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

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Abstract

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Inventors:

Moustakas, Theodore D. ^[1]; Maruska, H. Paul ^[1]

(Annandale, NJ)

Issue Date:: 1985-04-02

OSTI Identifier:: 865390

Patent Number(s):: 4508609

Application Number:: 06/535,902

Assignee:: Exxon Research & Engineering Co. (Florham Park, NJ) OSTI

DOE Contract Number:: XZ092191

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; sputtering; microcrystalline; amorphous; silicon; semiconductor; device; n-layers; sputtered; boron; phosphorous; heavily; doped; targets; constructed; layers; layer; undoped; target; semi-transparent; ohmic; electrode; heavily doped; amorphous silicon; semiconductor device; semi-transparent ohmic; ohmic electrode; silicon semiconductor; transparent ohmic; /204/136/257/

Citation Formats


                    Moustakas, Theodore D., and Maruska, H. Paul. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets.  United States: N. p., 1985. 
        Web.

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                    Moustakas, Theodore D., & Maruska, H. Paul. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets.  United States.

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                    Moustakas, Theodore D., and Maruska, H. Paul. Tue .  
        "Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets".  United States.  https://www.osti.gov/servlets/purl/865390.

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@article{osti_865390,

  title        = {Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets},

  author       = {Moustakas, Theodore D. and Maruska, H. Paul},

  abstractNote = {A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1985},

  month        = {4}

}

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