Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets
Abstract
A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.
- Inventors:
-
- Annandale, NJ
- Issue Date:
- OSTI Identifier:
- 865390
- Patent Number(s):
- 4508609
- Application Number:
- 06/535,902
- Assignee:
- Exxon Research & Engineering Co. (Florham Park, NJ)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- XZ092191
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; sputtering; microcrystalline; amorphous; silicon; semiconductor; device; n-layers; sputtered; boron; phosphorous; heavily; doped; targets; constructed; layers; layer; undoped; target; semi-transparent; ohmic; electrode; heavily doped; amorphous silicon; semiconductor device; semi-transparent ohmic; ohmic electrode; silicon semiconductor; transparent ohmic; /204/136/257/
Citation Formats
Moustakas, Theodore D, and Maruska, H Paul. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets. United States: N. p., 1985.
Web.
Moustakas, Theodore D, & Maruska, H Paul. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets. United States.
Moustakas, Theodore D, and Maruska, H Paul. Tue .
"Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets". United States. https://www.osti.gov/servlets/purl/865390.
@article{osti_865390,
title = {Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets},
author = {Moustakas, Theodore D and Maruska, H Paul},
abstractNote = {A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {4}
}