Synthesis of N-type thermoelectric materials, including Mg--Sn--Ge materials, and methods for fabrication thereof
Abstract
Discussed herein are systems and methods for fabrication of MgSnGe-based thermoelectric materials for applications from room temperature and near room temperature to high temperature applications. The TE materials may be fabricated by hand or ball milling a powder to a predetermined particle size and hot-pressing the milled powder to form a thermoelectric component with desired properties including a figure of merit (ZT) over a temperature range. The TE materials fabricated may be disposed in thermoelectric devices for varying applications.
- Inventors:
- Issue Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Solid State Solar-Thermal Energy Conversion Center; Univ. of Houston, TX (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1805545
- Patent Number(s):
- 10930834
- Application Number:
- 15/547,374
- Assignee:
- University of Houston System (Houston, TX)
- DOE Contract Number:
- EE0005806; SC0001299
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 12/10/2015
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Ren, Zhifeng, and Liu, Weishu. Synthesis of N-type thermoelectric materials, including Mg--Sn--Ge materials, and methods for fabrication thereof. United States: N. p., 2021.
Web.
Ren, Zhifeng, & Liu, Weishu. Synthesis of N-type thermoelectric materials, including Mg--Sn--Ge materials, and methods for fabrication thereof. United States.
Ren, Zhifeng, and Liu, Weishu. Tue .
"Synthesis of N-type thermoelectric materials, including Mg--Sn--Ge materials, and methods for fabrication thereof". United States. https://www.osti.gov/servlets/purl/1805545.
@article{osti_1805545,
title = {Synthesis of N-type thermoelectric materials, including Mg--Sn--Ge materials, and methods for fabrication thereof},
author = {Ren, Zhifeng and Liu, Weishu},
abstractNote = {Discussed herein are systems and methods for fabrication of MgSnGe-based thermoelectric materials for applications from room temperature and near room temperature to high temperature applications. The TE materials may be fabricated by hand or ball milling a powder to a predetermined particle size and hot-pressing the milled powder to form a thermoelectric component with desired properties including a figure of merit (ZT) over a temperature range. The TE materials fabricated may be disposed in thermoelectric devices for varying applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {2}
}