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Title: Wavelength-resonant surface-emitting semiconductor laser

Abstract

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

Inventors:
 [1];  [1];  [1];  [2];  [1];  [1];  [3]
  1. Albuquerque, NM
  2. Cedar Crest, NM
  3. Tijeras, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
867182
Patent Number(s):
4881236
Assignee:
University of New Mexico (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
F49620-87-C-0119
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
wavelength-resonant; surface-emitting; semiconductor; laser; wavelength; resonant; medium; disclosed; essential; feature; multiplicity; quantum-well; regions; separated; spacer; bandgap; period; consisting; region; adjacent; chosen; total; width; equal; integral; multiple; radiation; interacting; optical; electron-beam; electrical; injection; pumping; single; devices; arrays; reflectors; external; single device; semiconductor laser; laser medium; single devices; integral multiple; essential feature; emitting semiconductor; wavelength resonant; /372/359/

Citation Formats

Brueck, Steven R. J., Schaus, Christian F, Osinski, Marek A, McInerney, John G, Raja, M Yasin A., Brennan, Thomas M, and Hammons, Burrell E. Wavelength-resonant surface-emitting semiconductor laser. United States: N. p., 1989. Web.
Brueck, Steven R. J., Schaus, Christian F, Osinski, Marek A, McInerney, John G, Raja, M Yasin A., Brennan, Thomas M, & Hammons, Burrell E. Wavelength-resonant surface-emitting semiconductor laser. United States.
Brueck, Steven R. J., Schaus, Christian F, Osinski, Marek A, McInerney, John G, Raja, M Yasin A., Brennan, Thomas M, and Hammons, Burrell E. Sun . "Wavelength-resonant surface-emitting semiconductor laser". United States. https://www.osti.gov/servlets/purl/867182.
@article{osti_867182,
title = {Wavelength-resonant surface-emitting semiconductor laser},
author = {Brueck, Steven R. J. and Schaus, Christian F and Osinski, Marek A and McInerney, John G and Raja, M Yasin A. and Brennan, Thomas M and Hammons, Burrell E},
abstractNote = {A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}