Electrically pumped edge-emitting photonic bandgap semiconductor laser

Lin, Shawn-Yu; Zubrzycki, Walter J.

Title: Electrically pumped edge-emitting photonic bandgap semiconductor laser

Patent · Tue Jan 06 00:00:00 EST 2004

OSTI ID:1174668

Lin, Shawn-Yu; Zubrzycki, Walter J.

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

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Research Organization:: Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: 6,674,778

Application Number:: 10/044,488

OSTI ID:: 1174668

Country of Publication:: United States

Language:: English

References (11)

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