Visible light surface emitting semiconductor laser
- Boulder, CO
- Bridgewater, NJ
A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
- Assignee:
- United States of America as represented by Secretary of (Washington, DC)
- Patent Number(s):
- US 5258990
- OSTI ID:
- 868996
- Country of Publication:
- United States
- Language:
- English
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Visible light emitting vertical cavity surface emitting lasers
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