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Visible light surface emitting semiconductor laser

Patent ·
OSTI ID:868996

A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
Assignee:
United States of America as represented by Secretary of (Washington, DC)
Patent Number(s):
US 5258990
OSTI ID:
868996
Country of Publication:
United States
Language:
English

References (10)

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Cascadable laser logic devices: discrete integration of phototransistors with surface-emitting laser diodes journal January 1991
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Microlasers journal November 1991
Vertical cavity lasers for optical interconnects conference April 1991
Low series resistance vertical‐cavity front‐surface‐emitting laser diode journal May 1990