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Title: Long wavelength vertical cavity surface emitting laser

Abstract

Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55.degree. C.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175469
Patent Number(s):
6931042
Application Number:
09/871,492
Assignee:
Sandia Corporation
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Choquette, Kent D., and Klem, John F. Long wavelength vertical cavity surface emitting laser. United States: N. p., 2005. Web.
Choquette, Kent D., & Klem, John F. Long wavelength vertical cavity surface emitting laser. United States.
Choquette, Kent D., and Klem, John F. Tue . "Long wavelength vertical cavity surface emitting laser". United States. https://www.osti.gov/servlets/purl/1175469.
@article{osti_1175469,
title = {Long wavelength vertical cavity surface emitting laser},
author = {Choquette, Kent D. and Klem, John F.},
abstractNote = {Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {8}
}

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Works referenced in this record:

Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
journal, November 1996


GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
journal, February 1998


Super-lattice AlAs/AlInAs for lateral-oxide current confinement in InP-based lasers
journal, December 1998


Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
journal, August 1994


High-frequency modulation of oxide-confined vertical cavity surface emitting lasers
journal, January 1996


1-mW CW-RT monolithic VCSEL at 1.55 μm
journal, June 1999


Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
journal, October 1993