Long wavelength vertical cavity surface emitting laser
Abstract
Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55.degree. C.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175469
- Patent Number(s):
- 6931042
- Application Number:
- 09/871,492
- Assignee:
- Sandia Corporation
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Choquette, Kent D., and Klem, John F. Long wavelength vertical cavity surface emitting laser. United States: N. p., 2005.
Web.
Choquette, Kent D., & Klem, John F. Long wavelength vertical cavity surface emitting laser. United States.
Choquette, Kent D., and Klem, John F. Tue .
"Long wavelength vertical cavity surface emitting laser". United States. https://www.osti.gov/servlets/purl/1175469.
@article{osti_1175469,
title = {Long wavelength vertical cavity surface emitting laser},
author = {Choquette, Kent D. and Klem, John F.},
abstractNote = {Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {8}
}
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