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Title: Visible light surface emitting semiconductor laser

Abstract

A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

Inventors:
 [1];  [2]
  1. Boulder, CO
  2. Bridgewater, NJ
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
868996
Patent Number(s):
5258990
Assignee:
United States of America as represented by Secretary of (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC04-76
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
visible; light; surface; emitting; semiconductor; laser; vertical-cavity; surface-emitting; disclosed; comprising; cavity; sandwiched; distributed; bragg; reflectors; comprises; pair; spacer; layers; surrounding; active; optically; quantum-well; bandgap; serve; material; device; thickness; lambda; 2n; eff; integer; free-space; wavelength; radiation; effective; index; refraction; electrical; pumping; achieved; heavily; doping; bottom; mirror; substrate; conductivity-type; regions; upper; opposite; conductivity; type; form; diode; structure; applying; suitable; voltage; specific; embodiments; generating; green; blue; described; cavity surface; surface-emitting laser; bragg reflector; specific embodiments; quantum-well layer; quantum-well layers; vertical-cavity surface-emitting; disclosed comprising; semiconductor laser; laser cavity; visible light; laser radiation; specific embodiment; conductivity type; surface emitting; spacer layers; emitting laser; distributed bragg; spacer layer; emitting material; diode structure; doping regions; emitting semiconductor; bragg reflectors; bottom mirror; /372/

Citation Formats

Olbright, Gregory R, and Jewell, Jack L. Visible light surface emitting semiconductor laser. United States: N. p., 1993. Web.
Olbright, Gregory R, & Jewell, Jack L. Visible light surface emitting semiconductor laser. United States.
Olbright, Gregory R, and Jewell, Jack L. Fri . "Visible light surface emitting semiconductor laser". United States. https://www.osti.gov/servlets/purl/868996.
@article{osti_868996,
title = {Visible light surface emitting semiconductor laser},
author = {Olbright, Gregory R and Jewell, Jack L},
abstractNote = {A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}

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