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Title: Visible-wavelength semiconductor lasers and arrays

Abstract

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Inventors:
 [1];  [2]
  1. (Albuquerque, NM)
  2. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
870607
Patent Number(s):
5557627
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
visible-wavelength; semiconductor; lasers; arrays; visible; laser; inalgap; active; region; surrounded; algaas; layers; carbon; sole; p-type; dopant; embodiments; provided; vertical-cavity; surface-emitting; vcsels; edge-emitting; eels; transition; comprised; substantially; indium-free; alloy; alasp; algaasp; dbr; mirrors; confinement; improve; carrier; injection; device; efficiency; reducing; band; offsets; vcsel; devices; fabricated; according; one-wavelength-thick; lambda; optical; cavity; operate; continuous-wave; cw; lasing; output; powers; mw; peak; power; conversion; 11; cavity surface; surface-emitting laser; algaas layer; transition layer; vertical-cavity surface-emitting; semiconductor laser; power conversion; active region; optical cavity; conversion efficiency; output power; peak power; surface-emitting lasers; p-type dopant; semiconductor alloy; gaas layer; semiconductor lasers; type dopant; output powers; emitting laser; fabricated according; edge-emitting lasers; visible semiconductor; emitting lasers; algaas layers; devices fabricated; /372/

Citation Formats

Schneider, Jr., Richard P., and Crawford, Mary H. Visible-wavelength semiconductor lasers and arrays. United States: N. p., 1996. Web.
Schneider, Jr., Richard P., & Crawford, Mary H. Visible-wavelength semiconductor lasers and arrays. United States.
Schneider, Jr., Richard P., and Crawford, Mary H. Mon . "Visible-wavelength semiconductor lasers and arrays". United States. https://www.osti.gov/servlets/purl/870607.
@article{osti_870607,
title = {Visible-wavelength semiconductor lasers and arrays},
author = {Schneider, Jr., Richard P. and Crawford, Mary H},
abstractNote = {A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

Works referenced in this record:

Metalorganic vapour-phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes
journal, November 1994


Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes
journal, December 1994


High efficiency AlGaInP-based 660–680 nm vertical-cavity surface emitting lasers
journal, February 1995


Partial top dielectric stack distributed Bragg reflectors for red vertical cavity surface emitting laser arrays
journal, December 1994