Method and apparatus for plasma source ion implantation
Abstract
Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner.
- Inventors:
-
- Madison, WI
- Issue Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 866687
- Patent Number(s):
- 4764394
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC02-78ET51015
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; apparatus; plasma; source; implantation; surfaces; three-dimensional; targets; achieved; forming; ionized; target; enclosing; chamber; applying; pulse; voltage; conductive; walls; driven; simultaneously; manipulation; repetitive; pulses; typically; 20; kilovolts; causes; deeply; formed; neutral; gas; introduced; evacuated; therein; ionizing; radiation; constant; provided; surrounds; process; significant; increases; surface; hardness; wear; characteristics; various; materials; obtained; manner; neutral gas; significant increase; plasma source; ionizing radiation; evacuated chamber; ionized plasma; wear characteristics; various materials; repetitive pulses; surface hardness; implantation process; gas introduced; conductive walls; various material; /427/
Citation Formats
Conrad, John R. Method and apparatus for plasma source ion implantation. United States: N. p., 1988.
Web.
Conrad, John R. Method and apparatus for plasma source ion implantation. United States.
Conrad, John R. Fri .
"Method and apparatus for plasma source ion implantation". United States. https://www.osti.gov/servlets/purl/866687.
@article{osti_866687,
title = {Method and apparatus for plasma source ion implantation},
author = {Conrad, John R},
abstractNote = {Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1988},
month = {Fri Jan 01 00:00:00 EST 1988}
}