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Title: Method and apparatus for plasma source ion implantation

Abstract

Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner.

Inventors:
 [1]
  1. (Madison, WI)
Issue Date:
Research Org.:
University of Wisconsin
Sponsoring Org.:
USDOE
OSTI Identifier:
866687
Patent Number(s):
4764394
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI) CHO
DOE Contract Number:  
AC02-78ET51015
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; apparatus; plasma; source; implantation; surfaces; three-dimensional; targets; achieved; forming; ionized; target; enclosing; chamber; applying; pulse; voltage; conductive; walls; driven; simultaneously; manipulation; repetitive; pulses; typically; 20; kilovolts; causes; deeply; formed; neutral; gas; introduced; evacuated; therein; ionizing; radiation; constant; provided; surrounds; process; significant; increases; surface; hardness; wear; characteristics; various; materials; obtained; manner; neutral gas; significant increase; plasma source; ionizing radiation; evacuated chamber; ionized plasma; wear characteristics; various materials; repetitive pulses; surface hardness; implantation process; gas introduced; conductive walls; various material; /427/

Citation Formats

Conrad, John R. Method and apparatus for plasma source ion implantation. United States: N. p., 1988. Web.
Conrad, John R. Method and apparatus for plasma source ion implantation. United States.
Conrad, John R. Fri . "Method and apparatus for plasma source ion implantation". United States. https://www.osti.gov/servlets/purl/866687.
@article{osti_866687,
title = {Method and apparatus for plasma source ion implantation},
author = {Conrad, John R.},
abstractNote = {Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}

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