Global to push GA events into
skip to main content

Title: Pulsed source ion implantation apparatus and method

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.
  1. (Hercules, CA)
Issue Date:
OSTI Identifier:
Regents, University of California (Oakland, CA) LBNL
Patent Number(s):
US 5558718
Contract Number:
Research Org:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
Country of Publication:
United States
pulsed; source; implantation; apparatus; method; plasma-immersion; ion-implantation; implants; irregularly; shaped; controllable; depth; overheating; target; minimizing; voltage; breakdown; constant; electrical; bias; applied; pulsing; plasma; example; tungsten; filament; rf; antenna; electrically; conducting; insulating; targets; implanted; rf antenna; bias applied; irregularly shaped; electrical bias; voltage applied; plasma source; electrically conducting; voltage breakdown; tungsten filament; pulsed source; pulsed plasma; ion-implantation apparatus; /118/156/250/