Pulsed source ion implantation apparatus and method

Leung, Ka-Ngo

Title: Pulsed source ion implantation apparatus and method

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Abstract

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

Inventors:

Leung, Ka-Ngo ^[1]

Hercules, CA

Issue Date:: 1996-01-01

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

OSTI Identifier:: 870609

Patent Number(s):: 5558718

Assignee:: Regents, University of California (Oakland, CA)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C14/48 - Ion implantation
C23C8/36 - using ionised gases, e.g. ionitriding

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J37/32412 - {Plasma immersion ion implantation}

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DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: pulsed; source; implantation; apparatus; method; plasma-immersion; ion-implantation; implants; irregularly; shaped; controllable; depth; overheating; target; minimizing; voltage; breakdown; constant; electrical; bias; applied; pulsing; plasma; example; tungsten; filament; rf; antenna; electrically; conducting; insulating; targets; implanted; rf antenna; bias applied; irregularly shaped; electrical bias; voltage applied; plasma source; electrically conducting; voltage breakdown; tungsten filament; pulsed source; pulsed plasma; ion-implantation apparatus; /118/156/250/

Citation Formats


                    Leung, Ka-Ngo. Pulsed source ion implantation apparatus and method.  United States: N. p., 1996. 
        Web.

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                    Leung, Ka-Ngo. Pulsed source ion implantation apparatus and method.  United States.

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                    Leung, Ka-Ngo. Mon .  
        "Pulsed source ion implantation apparatus and method".  United States.  https://www.osti.gov/servlets/purl/870609.

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@article{osti_870609,

  title        = {Pulsed source ion implantation apparatus and method},

  author       = {Leung, Ka-Ngo},

  abstractNote = {A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1996},

  month        = {1}

}

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