Pulsed source ion implantation apparatus and method
Abstract
A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.
- Inventors:
-
- Hercules, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 870609
- Patent Number(s):
- 5558718
- Assignee:
- Regents, University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- pulsed; source; implantation; apparatus; method; plasma-immersion; ion-implantation; implants; irregularly; shaped; controllable; depth; overheating; target; minimizing; voltage; breakdown; constant; electrical; bias; applied; pulsing; plasma; example; tungsten; filament; rf; antenna; electrically; conducting; insulating; targets; implanted; rf antenna; bias applied; irregularly shaped; electrical bias; voltage applied; plasma source; electrically conducting; voltage breakdown; tungsten filament; pulsed source; pulsed plasma; ion-implantation apparatus; /118/156/250/
Citation Formats
Leung, Ka-Ngo. Pulsed source ion implantation apparatus and method. United States: N. p., 1996.
Web.
Leung, Ka-Ngo. Pulsed source ion implantation apparatus and method. United States.
Leung, Ka-Ngo. Mon .
"Pulsed source ion implantation apparatus and method". United States. https://www.osti.gov/servlets/purl/870609.
@article{osti_870609,
title = {Pulsed source ion implantation apparatus and method},
author = {Leung, Ka-Ngo},
abstractNote = {A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.