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Title: Pulsed source ion implantation apparatus and method

Abstract

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

Inventors:
 [1]
  1. Hercules, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
870609
Patent Number(s):
5558718
Assignee:
Regents, University of California (Oakland, CA)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
pulsed; source; implantation; apparatus; method; plasma-immersion; ion-implantation; implants; irregularly; shaped; controllable; depth; overheating; target; minimizing; voltage; breakdown; constant; electrical; bias; applied; pulsing; plasma; example; tungsten; filament; rf; antenna; electrically; conducting; insulating; targets; implanted; rf antenna; bias applied; irregularly shaped; electrical bias; voltage applied; plasma source; electrically conducting; voltage breakdown; tungsten filament; pulsed source; pulsed plasma; ion-implantation apparatus; /118/156/250/

Citation Formats

Leung, Ka-Ngo. Pulsed source ion implantation apparatus and method. United States: N. p., 1996. Web.
Leung, Ka-Ngo. Pulsed source ion implantation apparatus and method. United States.
Leung, Ka-Ngo. Mon . "Pulsed source ion implantation apparatus and method". United States. https://www.osti.gov/servlets/purl/870609.
@article{osti_870609,
title = {Pulsed source ion implantation apparatus and method},
author = {Leung, Ka-Ngo},
abstractNote = {A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

Patent:

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