Pulsed source ion implantation apparatus and method

Title: Pulsed source ion implantation apparatus and method

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A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

Inventors:

Leung, Ka-Ngo ^[1]

(Hercules, CA)

Issue Date:: 1996-01-01

OSTI Identifier:: 870609

Assignee:: Regents, University of California (Oakland, CA) LBNL

Patent Number(s):: US 5558718

Contract Number:: AC03-76SF00098

Research Org:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA

Country of Publication:: United States

Language:: English

Subject:: pulsed; source; implantation; apparatus; method; plasma-immersion; ion-implantation; implants; irregularly; shaped; controllable; depth; overheating; target; minimizing; voltage; breakdown; constant; electrical; bias; applied; pulsing; plasma; example; tungsten; filament; rf; antenna; electrically; conducting; insulating; targets; implanted; rf antenna; bias applied; irregularly shaped; electrical bias; voltage applied; plasma source; electrically conducting; voltage breakdown; tungsten filament; pulsed source; pulsed plasma; ion-implantation apparatus; /118/156/250/

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