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Title: Focused ion beam source method and apparatus

Patent ·
OSTI ID:873336

A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
DOE Contract Number:
W-31109-ENG-38
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 6137110
OSTI ID:
873336
Country of Publication:
United States
Language:
English