Focused ion beam source method and apparatus
Patent
·
OSTI ID:873336
- Naperville, IL
- Gaithersburg, MD
- Sunnyvale, CA
A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 6137110
- OSTI ID:
- 873336
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
focused
beam
source
method
apparatus
section
submicron
diameter
current
narrow
energy
range
generated
target
comprised
particle
material
laser
ablation
involves
directing
critical
producing
cloud
ablated
particles
unique
characteristics
extracting
focusing
charged
especially
suited
beams
semiconductor
device
analysis
modification
involves directing
especially suited
source material
particle beam
method involves
laser beam
charged particle
semiconductor device
beam source
laser ablation
energy range
unique characteristics
laser ablated
method involve
micron diameter
narrow energy
unique characteristic
/250/
beam
source
method
apparatus
section
submicron
diameter
current
narrow
energy
range
generated
target
comprised
particle
material
laser
ablation
involves
directing
critical
producing
cloud
ablated
particles
unique
characteristics
extracting
focusing
charged
especially
suited
beams
semiconductor
device
analysis
modification
involves directing
especially suited
source material
particle beam
method involves
laser beam
charged particle
semiconductor device
beam source
laser ablation
energy range
unique characteristics
laser ablated
method involve
micron diameter
narrow energy
unique characteristic
/250/