Process for producing amorphous and crystalline silicon nitride
Abstract
A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.
- Inventors:
-
- Thousand Oaks, CA
- Newbury Park, CA
- Issue Date:
- Research Org.:
- Rockwell International Corp., Canoga Park, CA (United States)
- OSTI Identifier:
- 865666
- Patent Number(s):
- 4552740
- Assignee:
- Rockwell International Corporation (El Segundo, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- DOE Contract Number:
- AC03-78ER01885
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; producing; amorphous; crystalline; silicon; nitride; disclosed; comprises; reacting; disulfide; ammonia; gas; elevated; temperature; preferred; embodiment; form; whiskers; needles; heated; ranging; 900; degree; 1200; produce; retains; whisker; needle; morphological; characteristics; carbide; prepared; substituted; methylamine; hydrocarbon; containing; active; hydrogen-containing; ethylene; temperature ranging; ammonia gas; silicon nitride; preferred embodiment; elevated temperature; silicon carbide; carbon containing; crystalline silicon; comprises reacting; producing amorphous; hydrocarbon containing; /423/
Citation Formats
Morgan, Peter E. D., and Pugar, Eloise A. Process for producing amorphous and crystalline silicon nitride. United States: N. p., 1985.
Web.
Morgan, Peter E. D., & Pugar, Eloise A. Process for producing amorphous and crystalline silicon nitride. United States.
Morgan, Peter E. D., and Pugar, Eloise A. Tue .
"Process for producing amorphous and crystalline silicon nitride". United States. https://www.osti.gov/servlets/purl/865666.
@article{osti_865666,
title = {Process for producing amorphous and crystalline silicon nitride},
author = {Morgan, Peter E. D. and Pugar, Eloise A},
abstractNote = {A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1985},
month = {Tue Jan 01 00:00:00 EST 1985}
}
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