Title: Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

Abstract

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

Inventors:

Findikoglu, Alp T ^[1]; Jia, Quanxi ^[1]; Arendt, Paul N ^[1]; Matias, Vladimir ^[2]; Choi, Woong ^[1]

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+ Show Inventor Affiliations

1. Los Alamos, NM
2. Santa Fe, NM

Issue Date:

2009-10-27

Research Org.:

Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

989007

Patent Number(s):

7608335

Application Number:

11/001,461

Assignee:

Los Alamos National Security, LLC (Los Alamos, NM)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/18 - characterised by the substrate
C30B29/06 - Silicon

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0237 - {Materials}
H01L21/0242 - {Crystalline insulating materials}
H01L21/02488 - {Insulating materials}
H01L21/02505 - {consisting of more than two layers}
H01L21/02521 - {Materials}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02587 - {Structure}
H01L21/02658 - {Pretreatments

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DOE Contract Number:  

W-7405-ENG-36

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE