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Title: Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.
Inventors:
 [1]
  1. (Powell, TN)
Issue Date:
OSTI Identifier:
869222
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN) ORNL
Patent Number(s):
US 5300322
Contract Number:
AC05-84OR21400
Research Org:
LOCKHEED MARTIN ENRGY SYST INC
Country of Publication:
United States
Language:
English
Subject:
molybdenum; enhanced; low-temperature; deposition; crystalline; silicon; nitride; process; chemical; vapor; comprises; steps; introducing; mixture; source; nitrogen; hydrogen; vessel; containing; suitable; substrate; thermally; decomposing; deposit; coating; comprising; dispersion; silicide; temperature deposition; silicon source; thermally decomposing; coating comprising; silicon nitride; chemical vapor; vapor deposition; crystalline silicon; vessel containing; suitable substrate; nitrogen source; molybdenum silicide; low-temperature deposition; /427/