Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

Lowden, Richard A

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Title: Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

Abstract

A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

Inventors:

Lowden, Richard A ^[1]

Powell, TN

Issue Date:: 1994-01-01

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

OSTI Identifier:: 869222

Patent Number(s):: 5300322

Assignee:: Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C16/345 - {Silicon nitride}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S427/10 - Chemical vapor infiltration, i.e. CVI

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DOE Contract Number:: AC05-84OR21400

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: molybdenum; enhanced; low-temperature; deposition; crystalline; silicon; nitride; process; chemical; vapor; comprises; steps; introducing; mixture; source; nitrogen; hydrogen; vessel; containing; suitable; substrate; thermally; decomposing; deposit; coating; comprising; dispersion; silicide; temperature deposition; silicon source; thermally decomposing; coating comprising; silicon nitride; chemical vapor; vapor deposition; crystalline silicon; vessel containing; suitable substrate; nitrogen source; molybdenum silicide; low-temperature deposition; /427/

Citation Formats


                    Lowden, Richard A. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride.  United States: N. p., 1994. 
        Web.

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                    Lowden, Richard A. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride.  United States.

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                    Lowden, Richard A. Sat .  
        "Molybdenum enhanced low-temperature deposition of crystalline silicon nitride".  United States.  https://www.osti.gov/servlets/purl/869222.

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@article{osti_869222,

  title        = {Molybdenum enhanced low-temperature deposition of crystalline silicon nitride},

  author       = {Lowden, Richard A},

  abstractNote = {A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {1}

}

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Works referenced in this record:

CVD Fabrication of In-situ Composites of Non-Oxide Ceramics
book, January 1986

Hirai, Toshio; Goto, Takashi
Tailoring Multiphase and Composite Ceramics
https://doi.org/10.1007/978-1-4613-2233-7_13

CVD of Si3N4 and Its Composites
book,

Hirai, Toshio
https://doi.org/10.1007/978-1-4684-8205-8_25

Pyrolytic Si3N4
journal, August 1972

Galasso, F.; Kuntz, U.; Croft, William J.
Journal of the American Ceramic Society, Vol. 55, Issue 8
https://doi.org/10.1111/j.1151-2916.1972.tb11332.x

Chemical Vapor Deposition of Silicon Nitride
journal, October 1976

Gebhardt, J. J.; Tanzilli, R. A.; Harris, T. A.
Journal of The Electrochemical Society, Vol. 123, Issue 10
https://doi.org/10.1149/1.2132642

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Similar Records

Title: Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

Abstract

Citation Formats

CVD Fabrication of In-situ Composites of Non-Oxide Ceramics book, January 1986

CVD of Si3N4 and Its Composites book,

Pyrolytic Si3N4 journal, August 1972

Chemical Vapor Deposition of Silicon Nitride journal, October 1976

CVD Fabrication of In-situ Composites of Non-Oxide Ceramics
book, January 1986

CVD of Si3N4 and Its Composites
book,

Pyrolytic Si3N4
journal, August 1972

Chemical Vapor Deposition of Silicon Nitride
journal, October 1976