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Title: Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

Abstract

A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.

Inventors:
 [1];  [2]
  1. (Isla Vista, CA)
  2. (Thousand Oaks, CA)
Issue Date:
Research Org.:
TAYLOR JOHN P
OSTI Identifier:
867426
Patent Number(s):
4935214
Assignee:
United States Department of Energy (Washington, DC) OSTI
DOE Contract Number:  
AC03-85SF16018
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; producing; purity; silicon; nitride; direct; reaction; elemental; nitrogen-hydrogen; liquid; reactants; disclosed; temperature; product; consisting; essentially; nitrogen; hydrogen; heated; produce; alpha; comprises; reacting; particulate; reactant; ammonia; hydrazine; formula; 1-4; straight; chain; cyclic; formed; intermediate; heating; 1200; degree; -1700; period; 15; minutes; hours; form; discovery; existence; soluble; si-n-h; enables; chemical; pathways; explored; previously; unavailable; conventional; solid; approaches; silicon-nitrogen; ceramics; straight chain; silicon nitride; consisting essentially; reaction product; process comprises; intermediate product; purity silicon; liquid reactant; direct reaction; elemental silicon; product consisting; liquid reactants; /423/

Citation Formats

Pugar, Eloise A., and Morgan, Peter E. D. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants. United States: N. p., 1990. Web.
Pugar, Eloise A., & Morgan, Peter E. D. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants. United States.
Pugar, Eloise A., and Morgan, Peter E. D. Mon . "Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants". United States. https://www.osti.gov/servlets/purl/867426.
@article{osti_867426,
title = {Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants},
author = {Pugar, Eloise A. and Morgan, Peter E. D.},
abstractNote = {A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

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