Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants
Abstract
A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.
- Inventors:
-
- Isla Vista, CA
- Thousand Oaks, CA
- Issue Date:
- Research Org.:
- TAYLOR JOHN P
- OSTI Identifier:
- 867426
- Patent Number(s):
- 4935214
- Assignee:
- United States Department of Energy (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- DOE Contract Number:
- AC03-85SF16018
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; producing; purity; silicon; nitride; direct; reaction; elemental; nitrogen-hydrogen; liquid; reactants; disclosed; temperature; product; consisting; essentially; nitrogen; hydrogen; heated; produce; alpha; comprises; reacting; particulate; reactant; ammonia; hydrazine; formula; 1-4; straight; chain; cyclic; formed; intermediate; heating; 1200; degree; -1700; period; 15; minutes; hours; form; discovery; existence; soluble; si-n-h; enables; chemical; pathways; explored; previously; unavailable; conventional; solid; approaches; silicon-nitrogen; ceramics; straight chain; silicon nitride; consisting essentially; reaction product; process comprises; intermediate product; purity silicon; liquid reactant; direct reaction; elemental silicon; product consisting; liquid reactants; /423/
Citation Formats
Pugar, Eloise A, and Morgan, Peter E. D. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants. United States: N. p., 1990.
Web.
Pugar, Eloise A, & Morgan, Peter E. D. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants. United States.
Pugar, Eloise A, and Morgan, Peter E. D. Mon .
"Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants". United States. https://www.osti.gov/servlets/purl/867426.
@article{osti_867426,
title = {Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants},
author = {Pugar, Eloise A and Morgan, Peter E. D.},
abstractNote = {A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}