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Title: Method and apparatus for producing high purity silicon

Abstract

A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

Inventors:
 [1]
  1. (Lakewood, CO)
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
865242
Patent Number(s):
4481232
Assignee:
United States of America as represented by Department of Energy (Washington, DC) NREL
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; apparatus; producing; purity; silicon; forming; copper; silie; alloy; positioning; enclosure; filament; placed; opposite; filled; chemical; vapor; transport; gas; adapted; transporting; finally; heated; temperatures; sufficient; react; surface; deposit; reacted; addition; carrying; disclosed; transport gas; chemical vapor; alloy surface; purity silicon; vapor transport; temperatures sufficient; /427/118/136/423/

Citation Formats

Olson, Jerry M. Method and apparatus for producing high purity silicon. United States: N. p., 1984. Web.
Olson, Jerry M. Method and apparatus for producing high purity silicon. United States.
Olson, Jerry M. Sun . "Method and apparatus for producing high purity silicon". United States. https://www.osti.gov/servlets/purl/865242.
@article{osti_865242,
title = {Method and apparatus for producing high purity silicon},
author = {Olson, Jerry M.},
abstractNote = {A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {1}
}

Patent:

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