Method and apparatus for producing high purity silicon

Olson, Jerry M

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Title: Method and apparatus for producing high purity silicon

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Abstract

A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

Inventors:

Olson, Jerry M ^[1]

Lakewood, CO

Issue Date:: 1984-01-01

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

OSTI Identifier:: 865242

Patent Number(s):: 4481232

Assignee:: United States of America as represented by Department of Energy (Washington, DC)

Patent Classifications (CPCs):: C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C01B33/035 - by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C01B33/039 - by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/24 - Deposition of silicon only

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DOE Contract Number:: EG-77-C-01-4042

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; apparatus; producing; purity; silicon; forming; copper; silie; alloy; positioning; enclosure; filament; placed; opposite; filled; chemical; vapor; transport; gas; adapted; transporting; finally; heated; temperatures; sufficient; react; surface; deposit; reacted; addition; carrying; disclosed; transport gas; chemical vapor; alloy surface; purity silicon; vapor transport; temperatures sufficient; /427/118/136/423/

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                    Olson, Jerry M. Method and apparatus for producing high purity silicon.  United States: N. p., 1984. 
        Web.

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                    Olson, Jerry M. Method and apparatus for producing high purity silicon.  United States.

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                    Olson, Jerry M. Sun .  
        "Method and apparatus for producing high purity silicon".  United States.  https://www.osti.gov/servlets/purl/865242.

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@article{osti_865242,

  title        = {Method and apparatus for producing high purity silicon},

  author       = {Olson, Jerry M},

  abstractNote = {A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1984},

  month        = {1}

}

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