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Title: Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

Abstract

A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N/sub n/H/sub (n+m)/ wherein: n = 1--4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200--1700/degree/C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si/endash/N/endash/H intermediate enables chemical pathways to be explored previously unavailable in conventional solid-state approaches to silicon-nitrogen ceramics

Inventors:
;
Issue Date:
Research Org.:
Rockwell International Corp., Canoga Park, CA (USA)
OSTI Identifier:
6300802
Patent Number(s):
-US-A7096577
Application Number:
ON: DE89011782
Assignee:
Dept. of Energy OAK; ERA-14-028847; EDB-89-078400
DOE Contract Number:  
FG03-85ER45221
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON NITRIDES; SYNTHESIS; AMMONIA; CHEMICAL REACTIONS; HYDROGEN; INVENTIONS; NITROGEN; PARTICLE SIZE; REACTION INTERMEDIATES; SILICON; VERY HIGH TEMPERATURE; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; NONMETALS; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS; SIZE; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Pugar, E.A., and Morgan, P.E.D. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants. United States: N. p., 1987. Web.
Pugar, E.A., & Morgan, P.E.D. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants. United States.
Pugar, E.A., and Morgan, P.E.D. Tue . "Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants". United States.
@article{osti_6300802,
title = {Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants},
author = {Pugar, E.A. and Morgan, P.E.D.},
abstractNote = {A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N/sub n/H/sub (n+m)/ wherein: n = 1--4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200--1700/degree/C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si/endash/N/endash/H intermediate enables chemical pathways to be explored previously unavailable in conventional solid-state approaches to silicon-nitrogen ceramics},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {9}
}