Process for producing amorphous and crystalline silicon nitride
Abstract
A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Rockwell International Corp., Canoga Park, CA (United States)
- OSTI Identifier:
- 7256900
- Patent Number(s):
- 4552740
- Application Number:
- PPN: US 6-704979
- Assignee:
- Rockwell International Corp., El Segundo, CA (United States)
- DOE Contract Number:
- AC03-78ER01885
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 22 Feb 1985
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON NITRIDES; FABRICATION; AMORPHOUS STATE; TEMPERATURE RANGE 1000-4000 K; WHISKERS; CRYSTALS; MONOCRYSTALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SILICON COMPOUNDS; TEMPERATURE RANGE; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication
Citation Formats
Morgan, P E.D., and Pugar, E A. Process for producing amorphous and crystalline silicon nitride. United States: N. p., 1985.
Web.
Morgan, P E.D., & Pugar, E A. Process for producing amorphous and crystalline silicon nitride. United States.
Morgan, P E.D., and Pugar, E A. Tue .
"Process for producing amorphous and crystalline silicon nitride". United States.
@article{osti_7256900,
title = {Process for producing amorphous and crystalline silicon nitride},
author = {Morgan, P E.D. and Pugar, E A},
abstractNote = {A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 12 00:00:00 EST 1985},
month = {Tue Nov 12 00:00:00 EST 1985}
}
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