Oxygen ion-beam microlithography
Abstract
A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used. 5 figures.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7275197
- Patent Number(s):
- 5041361
- Application Number:
- PPN: US 7-457852
- Assignee:
- Midwest Research Institute, Kansas City, MO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 27 Dec 1989
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; INTEGRATED CIRCUITS; MASKING; ETCHING; FABRICATION; ION BEAMS; NITROGEN IONS; OXIDATION; OXYGEN IONS; SILICON; BEAMS; CHARGED PARTICLES; CHEMICAL REACTIONS; ELECTRONIC CIRCUITS; ELEMENTS; IONS; MICROELECTRONIC CIRCUITS; SEMIMETALS; SURFACE FINISHING; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)
Citation Formats
Tsuo, Y S. Oxygen ion-beam microlithography. United States: N. p., 1991.
Web.
Tsuo, Y S. Oxygen ion-beam microlithography. United States.
Tsuo, Y S. Tue .
"Oxygen ion-beam microlithography". United States.
@article{osti_7275197,
title = {Oxygen ion-beam microlithography},
author = {Tsuo, Y S},
abstractNote = {A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used. 5 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 20 00:00:00 EDT 1991},
month = {Tue Aug 20 00:00:00 EDT 1991}
}
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