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Title: Oxygen ion-beam microlithography

Abstract

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used. 5 figures.

Inventors:
Issue Date:
OSTI Identifier:
7275197
Patent Number(s):
5041361 A
Application Number:
PPN: US 7-457852
Assignee:
Midwest Research Institute, Kansas City, MO (United States)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Patent File Date: 27 Dec 1989
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; INTEGRATED CIRCUITS; MASKING; ETCHING; FABRICATION; ION BEAMS; NITROGEN IONS; OXIDATION; OXYGEN IONS; SILICON; BEAMS; CHARGED PARTICLES; CHEMICAL REACTIONS; ELECTRONIC CIRCUITS; ELEMENTS; IONS; MICROELECTRONIC CIRCUITS; SEMIMETALS; SURFACE FINISHING; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Tsuo, Y S. Oxygen ion-beam microlithography. United States: N. p., 1991. Web.
Tsuo, Y S. Oxygen ion-beam microlithography. United States.
Tsuo, Y S. Tue . "Oxygen ion-beam microlithography". United States.
@article{osti_7275197,
title = {Oxygen ion-beam microlithography},
author = {Tsuo, Y S},
abstractNote = {A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used. 5 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {8}
}