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Title: Hydrogen ion microlithography

Abstract

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

Inventors:
 [1];  [2]
  1. Lakewood, CO
  2. Boulder, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
867542
Patent Number(s):
4960675
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
hydrogen; microlithography; disclosed; process; microelectronic; fabrication; semiconductor; device; processing; comprises; steps; providing; single; layer; amorphous; silicon; hydrogenated; material; pattern; recorded; selected; materials; preferentially; implanting; therein; permit; serve; mask-resist; wafer; suitable; subsequent; developed; provide; surface; adaptable; silicon material; microelectronic fabrication; device fabrication; single layer; amorphous silicon; hydrogenated amorphous; process comprises; semiconductor device; surface pattern; /430/250/438/

Citation Formats

Tsuo, Y Simon, and Deb, Satyen K. Hydrogen ion microlithography. United States: N. p., 1990. Web.
Tsuo, Y Simon, & Deb, Satyen K. Hydrogen ion microlithography. United States.
Tsuo, Y Simon, and Deb, Satyen K. Mon . "Hydrogen ion microlithography". United States. https://www.osti.gov/servlets/purl/867542.
@article{osti_867542,
title = {Hydrogen ion microlithography},
author = {Tsuo, Y Simon and Deb, Satyen K},
abstractNote = {Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

Patent:

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