Hydrogen ion microlithography
Abstract
Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7068448
- Patent Number(s):
- 4960675
- Application Number:
- PPN: US 7-229298
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 8 Aug 1988
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; MICROELECTRONIC CIRCUITS; FABRICATION; SEMICONDUCTOR DEVICES; HYDROGEN IONS; ION IMPLANTATION; MASKING; SILICON; CHARGED PARTICLES; ELECTRONIC CIRCUITS; ELEMENTS; IONS; SEMIMETALS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)
Citation Formats
Tsuo, Y S, and Deb, S K. Hydrogen ion microlithography. United States: N. p., 1990.
Web.
Tsuo, Y S, & Deb, S K. Hydrogen ion microlithography. United States.
Tsuo, Y S, and Deb, S K. Tue .
"Hydrogen ion microlithography". United States.
@article{osti_7068448,
title = {Hydrogen ion microlithography},
author = {Tsuo, Y S and Deb, S K},
abstractNote = {Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {10}
}
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