Oxygen ion-beam microlithography

Tsuo, Y Simon

Title: Oxygen ion-beam microlithography

Full Record
Other Related Research

Abstract

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.

Inventors:

Tsuo, Y Simon ^[1]

Lakewood, CO

Issue Date:: 1991-01-01

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

OSTI Identifier:: 867945

Patent Number(s):: 5041361

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):: G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

F - MECHANICAL ENGINEERING F23 - COMBUSTION APPARATUS F23G - CREMATION FURNACES

Show more

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F7/2065 - {using corpuscular radiation other than electron beams}
G03F7/36 - Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
G03F7/0044 - {involving an interaction between the metallic and non-metallic component, e.g. photodope systems}
G03F7/0043 - {Chalcogenides

F - MECHANICAL ENGINEERING F23 - COMBUSTION APPARATUS F23G - CREMATION FURNACES
F23G2204/201 - Plasma

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/911 - Differential oxidation and etching

Show less

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: oxygen; ion-beam; microlithography; method; providing; developing; resist; substrate; constructing; integrated; circuit; chips; following; steps; depositing; film; amorphous; silicon; hydrogenated; exposing; portions; low-energy; beams; oxidize; selected; nonoxidized; removed; etching; rf-excited; hydrogen; plasma; components; chip; constructed; entire; process; performed; in-line; vacuum; production; chambers; nitrogen; carbon; vacuum chamber; amorphous silicon; hydrogenated amorphous; integrated circuit; selected portion; selected portions; following steps; entire process; vacuum chambers; oxidized portion; line vacuum; /430/216/250/438/

Citation Formats


                    Tsuo, Y Simon. Oxygen ion-beam microlithography.  United States: N. p., 1991. 
        Web.

Copy to clipboard


                    Tsuo, Y Simon. Oxygen ion-beam microlithography.  United States.

Copy to clipboard


                    Tsuo, Y Simon. Tue .  
        "Oxygen ion-beam microlithography".  United States.  https://www.osti.gov/servlets/purl/867945.

Copy to clipboard


                    
@article{osti_867945,

  title        = {Oxygen ion-beam microlithography},

  author       = {Tsuo, Y Simon},

  abstractNote = {A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1991},

  month        = {1}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Hydrogen ion microlithography

Patent Tsuo, Y Simon [Lakewood, CO]; Deb, Satyen K [Boulder, CO]

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.
Full Text Available
Oxygen ion-beam microlithography

Patent Tsuo, Y S

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuummore » « less
Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths

Patent Wheeler, David R.

A method for patterning of resist surfaces which is particularly advantageous for systems having low photon flux and highly energetic, strongly attenuated radiation. A thin imaging layer is created with uniform silicon distribution in a bilayer format. An image is formed by exposing selected regions of the silylated imaging layer to radiation. The radiation incident upon the silyliated resist material results in acid generation which either catalyzes cleavage of Si--O bonds to produce moieties that are volatile enough to be driven off in a post exposure bake step or produces a resist material where the exposed portions of the imagingmore » « less
Full Text Available
Oxygen ion conducting materials

Patent Carter, J. David; Wang, Xiaoping; Vaughey, John; ...

An oxygen ion conducting ceramic oxide that has applications in industry including fuel cells, oxygen pumps, oxygen sensors, and separation membranes. The material is based on the idea that substituting a dopant into the host perovskite lattice of (La,Sr)MnO.sub.3 that prefers a coordination number lower than 6 will induce oxygen ion vacancies to form in the lattice. Because the oxygen ion conductivity of (La,Sr)MnO.sub.3 is low over a very large temperature range, the material exhibits a high overpotential when used. The inclusion of oxygen vacancies into the lattice by doping the material has been found to maintain the desirable propertiesmore » « less
Full Text Available
Oxygen ion conducting materials

Patent Vaughey, John; Krumpelt, Michael; Wang, Xiaoping; ...

An oxygen ion conducting ceramic oxide that has applications in industry including fuel cells, oxygen pumps, oxygen sensors, and separation membranes. The material is based on the idea that substituting a dopant into the host perovskite lattice of (La,Sr)MnO.sub.3 that prefers a coordination number lower than 6 will induce oxygen ion vacancies to form in the lattice. Because the oxygen ion conductivity of (La,Sr)MnO.sub.3 is low over a very large temperature range, the material exhibits a high overpotential when used. The inclusion of oxygen vacancies into the lattice by doping the material has been found to maintain the desirable propertiesmore » « less
Full Text Available

Similar Records