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Title: Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

Abstract

Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. In examples, the regrowth takes place over exposed portions of the channel layer in the source and drain regions of the device, and the regrown material has a composition different from the barrier layer. In other examples, the regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568755
Patent Number(s):
10,388,753
Application Number:
15/921,007
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 03/14/2018
Country of Publication:
United States
Language:
English

Citation Formats

Armstrong, Andrew, Baca, Albert G., Allerman, Andrew A., Sanchez, Carlos Anthony, Douglas, Erica Ann, and Kaplar, Robert. Regrowth method for fabricating wide-bandgap transistors, and devices made thereby. United States: N. p., 2019. Web.
Armstrong, Andrew, Baca, Albert G., Allerman, Andrew A., Sanchez, Carlos Anthony, Douglas, Erica Ann, & Kaplar, Robert. Regrowth method for fabricating wide-bandgap transistors, and devices made thereby. United States.
Armstrong, Andrew, Baca, Albert G., Allerman, Andrew A., Sanchez, Carlos Anthony, Douglas, Erica Ann, and Kaplar, Robert. Tue . "Regrowth method for fabricating wide-bandgap transistors, and devices made thereby". United States. https://www.osti.gov/servlets/purl/1568755.
@article{osti_1568755,
title = {Regrowth method for fabricating wide-bandgap transistors, and devices made thereby},
author = {Armstrong, Andrew and Baca, Albert G. and Allerman, Andrew A. and Sanchez, Carlos Anthony and Douglas, Erica Ann and Kaplar, Robert},
abstractNote = {Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. In examples, the regrowth takes place over exposed portions of the channel layer in the source and drain regions of the device, and the regrown material has a composition different from the barrier layer. In other examples, the regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {8}
}

Patent:

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