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Title: Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

Abstract

A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al2O3 substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

Inventors:
; ;
Issue Date:
Research Org.:
University Of Puerto Rico, San Juan, PR
Sponsoring Org.:
USDOE
OSTI Identifier:
1175845
Patent Number(s):
7081371
Application Number:
10/932,656
Assignee:
University Of Puerto Rico
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
F6-02*01ER45868
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Katiyar, Ram S., Bhattacharya, Pijush, and Das, Rasmi R.. Fabrication of stable, wide-bandgap thin films of Mg, Zn and O. United States: N. p., 2006. Web.
Katiyar, Ram S., Bhattacharya, Pijush, & Das, Rasmi R.. Fabrication of stable, wide-bandgap thin films of Mg, Zn and O. United States.
Katiyar, Ram S., Bhattacharya, Pijush, and Das, Rasmi R.. Tue . "Fabrication of stable, wide-bandgap thin films of Mg, Zn and O". United States. https://www.osti.gov/servlets/purl/1175845.
@article{osti_1175845,
title = {Fabrication of stable, wide-bandgap thin films of Mg, Zn and O},
author = {Katiyar, Ram S. and Bhattacharya, Pijush and Das, Rasmi R.},
abstractNote = {A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al2O3 substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {7}
}

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Works referenced in this record:

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