Title: Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

Abstract

Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.

Inventors:

Armstrong, Andrew; Baca, Albert G.; Allerman, Andrew A.; Sanchez, Carlos Anthony; Douglas, Erica Ann; Kaplar, Robert

Issue Date:

2020-02-04

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:

1632528

Patent Number(s):

10553697

Application Number:

16/385,193

Assignee:

National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0254 - {Nitrides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L21/02642 - {Mask materials other than SiO2 or SiN}
H01L21/18 - the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials {
H01L21/182 - {Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD}
H01L21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth {solid phase epitaxy}
H01L21/30621 - {Vapour phase etching}
H01L21/31111 - {by chemical means}
H01L21/743 - {Making of internal connections, substrate contacts}
H01L21/746 - {for AIII-BV integrated circuits}
H01L29/0843 - {Source or drain regions of field-effect devices}
H01L29/2003 - {Nitride compounds}
H01L29/201 - including two or more compounds {, e.g. alloys
H01L29/41758 - {for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
H01L29/42316 - {for field-effect transistors}
H01L29/66431 - {with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
H01L29/66462 - {with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT}
H01L29/778 - with two-dimensional charge carrier gas channel, e.g. HEMT {
H01L29/7781 - {with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT}
H01L29/7782 - {with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET}
H01L29/7786 - {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}

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DOE Contract Number:  

NA0003525

Resource Type:

Patent

Resource Relation:

Patent File Date: 04/16/2019

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE