Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
Abstract
Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1632528
- Patent Number(s):
- 10553697
- Application Number:
- 16/385,193
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 04/16/2019
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Armstrong, Andrew, Baca, Albert G., Allerman, Andrew A., Sanchez, Carlos Anthony, Douglas, Erica Ann, and Kaplar, Robert. Regrowth method for fabricating wide-bandgap transistors, and devices made thereby. United States: N. p., 2020.
Web.
Armstrong, Andrew, Baca, Albert G., Allerman, Andrew A., Sanchez, Carlos Anthony, Douglas, Erica Ann, & Kaplar, Robert. Regrowth method for fabricating wide-bandgap transistors, and devices made thereby. United States.
Armstrong, Andrew, Baca, Albert G., Allerman, Andrew A., Sanchez, Carlos Anthony, Douglas, Erica Ann, and Kaplar, Robert. Tue .
"Regrowth method for fabricating wide-bandgap transistors, and devices made thereby". United States. https://www.osti.gov/servlets/purl/1632528.
@article{osti_1632528,
title = {Regrowth method for fabricating wide-bandgap transistors, and devices made thereby},
author = {Armstrong, Andrew and Baca, Albert G. and Allerman, Andrew A. and Sanchez, Carlos Anthony and Douglas, Erica Ann and Kaplar, Robert},
abstractNote = {Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {2}
}