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Title: Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

Abstract

Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1632528
Patent Number(s):
10553697
Application Number:
16/385,193
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 04/16/2019
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Armstrong, Andrew, Baca, Albert G., Allerman, Andrew A., Sanchez, Carlos Anthony, Douglas, Erica Ann, and Kaplar, Robert. Regrowth method for fabricating wide-bandgap transistors, and devices made thereby. United States: N. p., 2020. Web.
Armstrong, Andrew, Baca, Albert G., Allerman, Andrew A., Sanchez, Carlos Anthony, Douglas, Erica Ann, & Kaplar, Robert. Regrowth method for fabricating wide-bandgap transistors, and devices made thereby. United States.
Armstrong, Andrew, Baca, Albert G., Allerman, Andrew A., Sanchez, Carlos Anthony, Douglas, Erica Ann, and Kaplar, Robert. Tue . "Regrowth method for fabricating wide-bandgap transistors, and devices made thereby". United States. https://www.osti.gov/servlets/purl/1632528.
@article{osti_1632528,
title = {Regrowth method for fabricating wide-bandgap transistors, and devices made thereby},
author = {Armstrong, Andrew and Baca, Albert G. and Allerman, Andrew A. and Sanchez, Carlos Anthony and Douglas, Erica Ann and Kaplar, Robert},
abstractNote = {Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {2}
}

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Works referenced in this record:

Transistor with enhanced channel charge inducing material layer and threshold voltage control
patent, December 2014


III-Nitride metal-insulator-semiconductor field-effect transistor
patent, June 2015