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Title: Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

Patent ·
OSTI ID:1632528
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Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Number(s):
10,553,697
Application Number:
16/385,193
OSTI ID:
1632528
Resource Relation:
Patent File Date: 04/16/2019
Country of Publication:
United States
Language:
English

References (17)

Recessed 0.25 [micro sign]m gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE journal January 2001
High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate journal December 2010
III-Nitride P-Channel Field Effect Transistor with Hole Carriers in the Channel patent-application September 2014
Transistor with enhanced channel charge inducing material layer and threshold voltage control patent December 2014
High Electron Mobility Transistor (HEMT) and Process of Forming the Same patent-application September 2017
Heterojunction Field-Effect Transistor patent-application March 2017
Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN journal January 2015
An AlN/Al 0.85 Ga 0.15 N high electron mobility transistor journal July 2016
AlGaN Channel HEMT With Extremely High Breakdown Voltage journal March 2013
Semiconductor Devices Including Implanted Regions and Protective Layers and Methods of Forming the Same patent-application July 2007
Optical Modulator, Methods of Manufacturing and Operating the Same and Optical Apparatus Including the Optical Modulator patent-application December 2010
Liquid Composition for Cleaning Semiconductor Device, and Method for Cleaning Semiconductor Device patent-application June 2017
AlGaN channel field effect transistors with graded heterostructure ohmic contacts journal September 2016
Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate journal November 2004
Method for Manufacturing a HEMT Transistor and HEMT Transistor with Improved Electron Mobility patent-application May 2017
III-Nitride metal-insulator-semiconductor field-effect transistor patent June 2015
III-Nitride Metal Insulator Semiconductor Field effect Transistor patent-application January 2013

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