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Title: Highly doped layer for tunnel junctions in solar cells

Abstract

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta-doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta-doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Inventors:
Issue Date:
Research Org.:
The Boeing Co., Chicago, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568493
Patent Number(s):
10326042
Application Number:
15/267,192
Assignee:
The Boeing Company (Chicago, IL)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FC36-07GO17052
Resource Type:
Patent
Resource Relation:
Patent File Date: 09/16/2016
Country of Publication:
United States
Language:
English

Citation Formats

Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells. United States: N. p., 2019. Web.
Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells. United States.
Fetzer, Christopher M. Tue . "Highly doped layer for tunnel junctions in solar cells". United States. https://www.osti.gov/servlets/purl/1568493.
@article{osti_1568493,
title = {Highly doped layer for tunnel junctions in solar cells},
author = {Fetzer, Christopher M.},
abstractNote = {A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta-doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta-doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {6}
}

Patent:

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