Highly doped layer for tunnel junctions in solar cells
Abstract
A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta-doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta-doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.
- Inventors:
- Issue Date:
- Research Org.:
- The Boeing Co., Chicago, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568493
- Patent Number(s):
- 10326042
- Application Number:
- 15/267,192
- Assignee:
- The Boeing Company (Chicago, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- FC36-07GO17052
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 09/16/2016
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells. United States: N. p., 2019.
Web.
Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells. United States.
Fetzer, Christopher M. Tue .
"Highly doped layer for tunnel junctions in solar cells". United States. https://www.osti.gov/servlets/purl/1568493.
@article{osti_1568493,
title = {Highly doped layer for tunnel junctions in solar cells},
author = {Fetzer, Christopher M.},
abstractNote = {A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta-doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta-doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 18 00:00:00 EDT 2019},
month = {Tue Jun 18 00:00:00 EDT 2019}
}
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Works referenced in this record:
Group III-V solar cell
patent-application, July 2003
- Takamoto, Tatsuya
- US Patent Application 10/340711; 20030136442
Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
patent, November 2001
- King, Richard R.; Joslin, David E.; Karam, Nasser H.
- US Patent Document 6,316,715