Highly doped layer for tunnel junctions in solar cells
Abstract
A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.
- Inventors:
- Issue Date:
- Research Org.:
- THE BOEING COMPANY, Chicago, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1373704
- Patent Number(s):
- 9722131
- Application Number:
- 12/404,795
- Assignee:
- THE BOEING COMPANY
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- FC36-07GO17052
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2009 Mar 16
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE
Citation Formats
Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells. United States: N. p., 2017.
Web.
Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells. United States.
Fetzer, Christopher M. Tue .
"Highly doped layer for tunnel junctions in solar cells". United States. https://www.osti.gov/servlets/purl/1373704.
@article{osti_1373704,
title = {Highly doped layer for tunnel junctions in solar cells},
author = {Fetzer, Christopher M.},
abstractNote = {A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}
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