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Title: Highly doped layer for tunnel junctions in solar cells

Abstract

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Inventors:
Issue Date:
Research Org.:
THE BOEING COMPANY, Chicago, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1373704
Patent Number(s):
9722131
Application Number:
12/404,795
Assignee:
THE BOEING COMPANY
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FC36-07GO17052
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009 Mar 16
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells. United States: N. p., 2017. Web.
Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells. United States.
Fetzer, Christopher M. Tue . "Highly doped layer for tunnel junctions in solar cells". United States. https://www.osti.gov/servlets/purl/1373704.
@article{osti_1373704,
title = {Highly doped layer for tunnel junctions in solar cells},
author = {Fetzer, Christopher M.},
abstractNote = {A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}

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Works referenced in this record:

Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts
journal, September 1993


Growth and electrical characterization of Si delta‐doped GaInP by low pressure metalorganic chemical vapor deposition
journal, May 1996


AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
journal, August 1993


Application of δ-doping in GaAs tunnel junctions
journal, January 1994


Multi-junction III–V solar cells: current status and future potential
journal, July 2005