Highly doped layer for tunnel junctions in solar cells

Fetzer, Christopher M.

Title: Highly doped layer for tunnel junctions in solar cells

Abstract

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Inventors:: Fetzer, Christopher M.

Issue Date:: 2017-08-01

Research Org.:: THE BOEING COMPANY, Chicago, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1373704

Patent Number(s):: 9722131

Application Number:: 12/404,795

Assignee:: THE BOEING COMPANY

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/88 - Tunnel-effect diodes
H01L31/03046 - {including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP}
H01L31/035272 - {characterised by at least one potential jump barrier or surface barrier}
H01L31/0687 - Multiple junction or tandem solar cells
H01L31/0693 - the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L31/1844 - {comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials
Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: FC36-07GO17052

Resource Type:: Patent

Resource Relation:: Patent File Date: 2009 Mar 16

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats


                    Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells.  United States: N. p., 2017. 
        Web.

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                    Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells.  United States.

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                    Fetzer, Christopher M. Tue .  
        "Highly doped layer for tunnel junctions in solar cells".  United States.  https://www.osti.gov/servlets/purl/1373704.

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@article{osti_1373704,

  title        = {Highly doped layer for tunnel junctions in solar cells},

  author       = {Fetzer, Christopher M.},

  abstractNote = {A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2017},

  month        = {8}

}

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Works referenced in this record:

Heterojunction solar cell
patent, August 1994

Olson, Jerry M.
US Patent Document 5,342,453
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5342453

Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
patent, November 2001

King, Richard R.; Joslin, David E.; Karam, Nasser H.
US Patent Document 6,316,715
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6316715

Group III-V solar cell
patent-application, July 2003

Takamoto, Tatsuya
US Patent Application 10/340711; 20030136442
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030136442

Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts
journal, September 1993

DeSalvo, Gregory C.
Journal of Applied Physics, Vol. 74, Issue 6, p. 4207-4212
https://doi.org/10.1063/1.354425

Growth and electrical characterization of Si delta‐doped GaInP by low pressure metalorganic chemical vapor deposition
journal, May 1996

Wang, Chien‐Jen; Feng, Ming‐Shiann; Chan, Shih‐Hsiung
Journal of Applied Physics, Vol. 79, Issue 10, p. 8054-8059
https://doi.org/10.1063/1.362359

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
journal, August 1993

Jung, D.; Parker, C. A.; Ramdani, J.
Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093
https://doi.org/10.1063/1.354753

Application of δ-doping in GaAs tunnel junctions
journal, January 1994

Wolter, J. H.; Leys, M. R.; Ragay, F. W.
Electronics Letters, Vol. 30, Issue 1, p. 86-87
https://doi.org/10.1049/el:19940002

Multi-junction III–V solar cells: current status and future potential
journal, July 2005

Yamaguchi, Masafumi; Takamoto, Tatsuya; Araki, Kenji
Solar Energy, Vol. 79, Issue 1, p. 78-85
https://doi.org/10.1016/j.solener.2004.09.018

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Title: Highly doped layer for tunnel junctions in solar cells

Abstract

Citation Formats

Heterojunction solar cell patent, August 1994

Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material patent, November 2001

Group III-V solar cell patent-application, July 2003

Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts journal, September 1993

Growth and electrical characterization of Si delta‐doped GaInP by low pressure metalorganic chemical vapor deposition journal, May 1996

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application journal, August 1993

Application of δ-doping in GaAs tunnel junctions journal, January 1994

Multi-junction III–V solar cells: current status and future potential journal, July 2005

Heterojunction solar cell
patent, August 1994

Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
patent, November 2001

Group III-V solar cell
patent-application, July 2003

Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts
journal, September 1993

Growth and electrical characterization of Si delta‐doped GaInP by low pressure metalorganic chemical vapor deposition
journal, May 1996

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
journal, August 1993

Application of δ-doping in GaAs tunnel junctions
journal, January 1994

Multi-junction III–V solar cells: current status and future potential
journal, July 2005