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Title: Highly doped layer for tunnel junctions in solar cells

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.
Inventors:
Issue Date:
OSTI Identifier:
1373704
Assignee:
THE BOEING COMPANY GFO
Patent Number(s):
9,722,131
Application Number:
12/404,795
Contract Number:
FC36-07GO17052
Resource Relation:
Patent File Date: 2009 Mar 16
Research Org:
THE BOEING COMPANY, Chicago, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Other works cited in this record:

Heterojunction solar cell
patent, August 1994

Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
patent, November 2001

Group III-V solar cell
patent-application, July 2003

Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts
journal, September 1993
  • DeSalvo, Gregory C.
  • Journal of Applied Physics, Vol. 74, Issue 6, p. 4207-4212
  • DOI: 10.1063/1.354425

Growth and electrical characterization of Si delta‐doped GaInP by low pressure metalorganic chemical vapor deposition
journal, May 1996
  • Wang, Chien‐Jen; Feng, Ming‐Shiann; Chan, Shih‐Hsiung
  • Journal of Applied Physics, Vol. 79, Issue 10, p. 8054-8059
  • DOI: 10.1063/1.362359

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
journal, August 1993
  • Jung, D.; Parker, C. A.; Ramdani, J.
  • Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093
  • DOI: 10.1063/1.354753

Application of δ-doping in GaAs tunnel junctions
journal, January 1994
  • Wolter, J. H.; Leys, M. R.; Ragay, F. W.
  • Electronics Letters, Vol. 30, Issue 1, p. 86-87
  • DOI: 10.1049/el:19940002

Multi-junction III–V solar cells: current status and future potential
journal, July 2005

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