Tunnel junctions for multijunction solar cells
Abstract
Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States); Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1986929
- Patent Number(s):
- 11527667
- Application Number:
- 15/964,852
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO); The Regents of the University of California, A California Corporation (Oakland, CA)
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 04/27/2018
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Jain, Nikhil, Steiner, Myles Aaron, Geisz, John Franz, Perl, Emmett Edward, and France, Ryan Matthew. Tunnel junctions for multijunction solar cells. United States: N. p., 2022.
Web.
Jain, Nikhil, Steiner, Myles Aaron, Geisz, John Franz, Perl, Emmett Edward, & France, Ryan Matthew. Tunnel junctions for multijunction solar cells. United States.
Jain, Nikhil, Steiner, Myles Aaron, Geisz, John Franz, Perl, Emmett Edward, and France, Ryan Matthew. Tue .
"Tunnel junctions for multijunction solar cells". United States. https://www.osti.gov/servlets/purl/1986929.
@article{osti_1986929,
title = {Tunnel junctions for multijunction solar cells},
author = {Jain, Nikhil and Steiner, Myles Aaron and Geisz, John Franz and Perl, Emmett Edward and France, Ryan Matthew},
abstractNote = {Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {12}
}
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