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Title: Tunnel junctions for multijunction solar cells

Abstract

Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States); Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1986929
Patent Number(s):
11527667
Application Number:
15/964,852
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO); The Regents of the University of California, A California Corporation (Oakland, CA)
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 04/27/2018
Country of Publication:
United States
Language:
English

Citation Formats

Jain, Nikhil, Steiner, Myles Aaron, Geisz, John Franz, Perl, Emmett Edward, and France, Ryan Matthew. Tunnel junctions for multijunction solar cells. United States: N. p., 2022. Web.
Jain, Nikhil, Steiner, Myles Aaron, Geisz, John Franz, Perl, Emmett Edward, & France, Ryan Matthew. Tunnel junctions for multijunction solar cells. United States.
Jain, Nikhil, Steiner, Myles Aaron, Geisz, John Franz, Perl, Emmett Edward, and France, Ryan Matthew. Tue . "Tunnel junctions for multijunction solar cells". United States. https://www.osti.gov/servlets/purl/1986929.
@article{osti_1986929,
title = {Tunnel junctions for multijunction solar cells},
author = {Jain, Nikhil and Steiner, Myles Aaron and Geisz, John Franz and Perl, Emmett Edward and France, Ryan Matthew},
abstractNote = {Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {12}
}

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