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Title: 2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction

Abstract

A 2-terminal multi-junction solar cell having a thin film of metal halide semiconductor as the top solar-cell material and crystalline silicon as the bottom solar-cell material. In the illustrative embodiment, the top solar-cell material is a perovskite of the form AM(IxH1-x)3, where A is a cation, preferably methylammonium (CH3NH3), formamidinium ([R2N—CH═NR2]+), or cesium; M is metal, preferably Pb, Sn, Ge; H is a halide, preferably Br or Cl; and x=iodine fraction, in the range of 0 to 1, inclusive. The integration of the two solar-cell materials is enabled by the use of a tunnel junction composed of indirect band-gap material.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Stanford Univ., CA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1632443
Patent Number(s):
10535791
Application Number:
14/958,587
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Stanford, CA); Massachusetts Institute of Technology (Cambridge, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
EE0004946; EE0006707
Resource Type:
Patent
Resource Relation:
Patent File Date: 12/03/2015
Country of Publication:
United States
Language:
English

Citation Formats

Mailoa, Jonathan P., Bailie, Colin David, Johlin, Eric Carl, McGehee, Michael David, and Buonassisi, Tonio. 2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction. United States: N. p., 2020. Web.
Mailoa, Jonathan P., Bailie, Colin David, Johlin, Eric Carl, McGehee, Michael David, & Buonassisi, Tonio. 2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction. United States.
Mailoa, Jonathan P., Bailie, Colin David, Johlin, Eric Carl, McGehee, Michael David, and Buonassisi, Tonio. Tue . "2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction". United States. https://www.osti.gov/servlets/purl/1632443.
@article{osti_1632443,
title = {2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction},
author = {Mailoa, Jonathan P. and Bailie, Colin David and Johlin, Eric Carl and McGehee, Michael David and Buonassisi, Tonio},
abstractNote = {A 2-terminal multi-junction solar cell having a thin film of metal halide semiconductor as the top solar-cell material and crystalline silicon as the bottom solar-cell material. In the illustrative embodiment, the top solar-cell material is a perovskite of the form AM(IxH1-x)3, where A is a cation, preferably methylammonium (CH3NH3), formamidinium ([R2N—CH═NR2]+), or cesium; M is metal, preferably Pb, Sn, Ge; H is a halide, preferably Br or Cl; and x=iodine fraction, in the range of 0 to 1, inclusive. The integration of the two solar-cell materials is enabled by the use of a tunnel junction composed of indirect band-gap material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {1}
}

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