Title: Patterning by energetically-stimulated local removal of solid-condensed-gas layers and solid state chemical reactions produced with such layers

Abstract

The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions. The structure can then be processed, with at least a portion of the patterned solid condensate layer on the structure surface, and then the solid condensate layer removed. Further there can be stimulated localized reaction between the solid condensate layer and the structure by directing a beam of energy at at least one selected region of the condensate layer.

Inventors:

Golovchenko, Jene A.; King, Gavin M.; Schurmann, Gregor M.; Branton, Daniel

Issue Date:

Tue Aug 09 00:00:00 EDT 2011

Research Org.:

Harvard Univ., Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531690

Patent Number(s):

7993538

Application Number:

12/287,573

Assignee:

President and Fellows of Harvard College (Cambridge, MA)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C14/06 - characterised by the coating material
C23C14/5873 - {Removal of material}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

H01J2237/31732 - Depositing thin layers on selected microareas
H01J2237/3174 - Etching microareas
H01J37/3005 - {Observing the objects or the point of impact on the object}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02238 - {silicon in uncombined form, i.e. pure silicon}
H01L21/0332 - {characterised by their composition, e.g. multilayer masks, materials}
H01L21/0337 - {characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}
H01L21/30604 - {Chemical etching}
H01L21/3065 - Plasma etching
H01L21/31662 - {of silicon in uncombined form}
H01L21/3185 - {of siliconnitrides}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/856 - including etching/cutting
Y10S977/857 - including coating
Y10S977/888 - Shaping or removal of materials, e.g. etching
Y10S977/89 - Deposition of materials, e.g. coating, cvd, or ald
Y10S977/891 - Vapor phase deposition

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DOE Contract Number:  

F-49620-01-1-0467; FG02-01ER45922

Resource Type:

Patent

Resource Relation:

Patent File Date: 2008-10-10

Country of Publication:

United States

Language:

English