Controlled fabrication of gaps in electrically conducting structures
Abstract
A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.
- Inventors:
- Issue Date:
- Research Org.:
- Harvard Univ., Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531597
- Patent Number(s):
- 7582490
- Application Number:
- 10/767,102
- Assignee:
- President and Fellows of Harvard College (Cambridge, MA)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- FG02-01ER45922
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2004-01-29
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Golovchenko, Jene A., Schrmann, Gregor M., King, Gavin M., and Branton, Daniel. Controlled fabrication of gaps in electrically conducting structures. United States: N. p., 2009.
Web.
Golovchenko, Jene A., Schrmann, Gregor M., King, Gavin M., & Branton, Daniel. Controlled fabrication of gaps in electrically conducting structures. United States.
Golovchenko, Jene A., Schrmann, Gregor M., King, Gavin M., and Branton, Daniel. Tue .
"Controlled fabrication of gaps in electrically conducting structures". United States. https://www.osti.gov/servlets/purl/1531597.
@article{osti_1531597,
title = {Controlled fabrication of gaps in electrically conducting structures},
author = {Golovchenko, Jene A. and Schrmann, Gregor M. and King, Gavin M. and Branton, Daniel},
abstractNote = {A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {9}
}