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Title: Method to fabricate quantum dot field-effect transistors without bias-stress effect

Abstract

Disclosed herein are embodiments of a method to form quantum dot field-effect transistors (QD FETs) having little to no bias-stress effect. Bias-stress effect can be reduced or eliminated through, as an example, the use of a gas or liquid to remove ligands and/or reduce charge trapping on the QD FETs, followed by deposition of an inorganic or organic matrix around the QDs in the FET.

Inventors:
;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1525017
Patent Number(s):
10,224,422
Application Number:
14/973,522
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
SC0003904
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015-12-17
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE

Citation Formats

Law, Matt, and Tolentino, Jason. Method to fabricate quantum dot field-effect transistors without bias-stress effect. United States: N. p., 2019. Web.
Law, Matt, & Tolentino, Jason. Method to fabricate quantum dot field-effect transistors without bias-stress effect. United States.
Law, Matt, and Tolentino, Jason. Tue . "Method to fabricate quantum dot field-effect transistors without bias-stress effect". United States. https://www.osti.gov/servlets/purl/1525017.
@article{osti_1525017,
title = {Method to fabricate quantum dot field-effect transistors without bias-stress effect},
author = {Law, Matt and Tolentino, Jason},
abstractNote = {Disclosed herein are embodiments of a method to form quantum dot field-effect transistors (QD FETs) having little to no bias-stress effect. Bias-stress effect can be reduced or eliminated through, as an example, the use of a gas or liquid to remove ligands and/or reduce charge trapping on the QD FETs, followed by deposition of an inorganic or organic matrix around the QDs in the FET.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {3}
}

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Works referenced in this record:

Luminescent efficiency of semiconductor nanocrystals by surface treatment
patent, October 2007