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Title: Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

Abstract

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

Inventors:
 [1];  [2];  [3]
  1. (Vienna, VA)
  2. (Rockville, MD)
  3. (Albuquerque, NM)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
873071
Patent Number(s):
6083781
Assignee:
United States of America as represented by United States (Washington, DC) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; manufacturing; compound; semiconductor; field-effect; transistors; improved; dc; frequency; performance; devices; including; p-type; dopant; disclosed; co-implanted; n-type; donor; species; time; n-channel; formed; single; anneal; moderate; temperature; performed; manufactured; preferred; embodiment; n-mesfets; similar; field; effect; transistor; atoms; gaas; form; exhibits; unique; characteristic; context; activation; efficiency; typically; 50; consequently; sharpen; compensating; donors; region; si-channel; tail; contribute; substantially; acceptor; concentration; buried; result; provides; related; enhancement; high-frequency; field-effect transistor; field effect; preferred embodiment; semiconductor device; compound semiconductor; semiconductor devices; p-type dopant; devices including; effect transistor; type dopant; moderate temperature; field-effect transistors; rate temperature; effect transistors; improved field; semiconductor field; unique characteristic; similar field; donor species; /438/

Citation Formats

Zolper, John C., Sherwin, Marc E., and Baca, Albert G. Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance. United States: N. p., 2000. Web.
Zolper, John C., Sherwin, Marc E., & Baca, Albert G. Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance. United States.
Zolper, John C., Sherwin, Marc E., and Baca, Albert G. Sat . "Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance". United States. https://www.osti.gov/servlets/purl/873071.
@article{osti_873071,
title = {Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance},
author = {Zolper, John C. and Sherwin, Marc E. and Baca, Albert G.},
abstractNote = {A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

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