Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

Patent · Tue Aug 20 00:00:00 EDT 2019

OSTI ID:1568755

Armstrong, Andrew; Baca, Albert G.; Allerman, Andrew A.; Sanchez, Carlos Anthony; Douglas, Erica Ann; Kaplar, Robert

Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. In examples, the regrowth takes place over exposed portions of the channel layer in the source and drain regions of the device, and the regrown material has a composition different from the barrier layer. In other examples, the regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: NA0003525
• Assignee: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
• Patent Number(s): 10,388,753
• Application Number: 15/921,007
• OSTI ID: 1568755
• Resource Relation: Patent File Date: 03/14/2018
• Country of Publication: United States
• Language: English