Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Klein, Brianna; Allerman, Andrew; Armstrong, Andrew; Rosprim, Mary; Tyznik, Colin; Zhu, Yinxuan; Joishi, Chandan; Chae, Chris; Rajan, Siddharth

doi:10.1002/admi.202301080

Title: Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Journal Article · Fri Mar 29 00:00:00 EDT 2024 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.202301080· OSTI ID:2331337

^[1]; Allerman, Andrew ^[1]; Armstrong, Andrew ^[1]; Rosprim, Mary ^[1]; Tyznik, Colin ^[1]; Zhu, Yinxuan ^[2]; Joishi, Chandan ^[2]; Chae, Chris ^[2]; Rajan, Siddharth ^[2]

Sandia National Laboratories PO Box 5800 Albuquerque NM 87185‐1085 USA
205 Dreese Laboratory 2015 Neil Avenue Columbus OH 43210 USA

Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al _0.85 Ga _0.15 N barrier/Al _0.50 Ga _0.50 N channel HEMT with a large positive threshold voltage (V _TH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10 ⁻⁶ Ω cm ² _, average = 1.8 × 10 ⁻⁴ Ω cm ² ) are demonstrated in an Al _0.85 Ga _0.15 N barrier/Al _0.68 Ga _0.32 N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; US Army Research Office (ARO)

Grant/Contract Number:: NA0003525; W911NF-22-2-0163

OSTI ID:: 2331337

Alternate ID(s):: OSTI ID: 2338248

Report Number(s):: SAND-2024-04770J; 2301080

Journal Information:: Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces; ISSN 2196-7350

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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