An AlN/Al0.85Ga0.15N high electron mobility transistor

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; Douglas, Erica A.; Sanchez, Carlos A.; King, Michael P.; Coltrin, Michael E.; Fortune, Torben R.; Kaplar, Robert J.

doi:10.1063/1.4959179

Title: An AlN/Al_0.85Ga_0.15N high electron mobility transistor

Journal Article · Fri Jul 22 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4959179· OSTI ID:1325715

Baca, Albert G. ^[1]; Armstrong, Andrew M. ^[1]; Allerman, Andrew A. ^[1]; Douglas, Erica A. ^[1]; Sanchez, Carlos A. ^[1]; King, Michael P. ^[1]; Coltrin, Michael E. ^[1]; Fortune, Torben R. ^[1];

^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al_0.85Ga_0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I_on/I_off current ratio greater than 10⁷ and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion, the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1325715

Report Number(s):: SAND-2016-6904J; APPLAB; 645875

Journal Information:: Applied Physics Letters, Vol. 109, Issue 3; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 95 works

Citation information provided by
Web of Science

References (26)

AlGaN/GaN HEMTs-an overview of device operation and applications Mishra, U. K.; Parikh, P.; Wu, Yi-Feng Proceedings of the IEEE, Vol. 90, Issue 6, p. 1022-1031 https://doi.org/10.1109/JPROC.2002.1021567	journal	June 2002
Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors Nanjo, Takuma; Takeuchi, Misaichi; Suita, Muneyoshi Applied Physics Letters, Vol. 92, Issue 26 https://doi.org/10.1063/1.2949087	journal	June 2008
Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling Turuvekere, Sreenidhi; Karumuri, Naveen; Rahman, A. Azizur IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2272700	journal	October 2013
Field-Plated Ga ₂ O ₃ MOSFETs With a Breakdown Voltage of Over 750 V Wong, Man Hoi; Sasaki, Kohei; Kuramata, Akito IEEE Electron Device Letters, Vol. 37, Issue 2 https://doi.org/10.1109/LED.2015.2512279	journal	February 2016
Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors Arulkumaran, S.; Egawa, T.; Ishikawa, H. Applied Physics Letters, Vol. 82, Issue 18 https://doi.org/10.1063/1.1571655	journal	May 2003
Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors Hu, X.; Koudymov, A.; Simin, G. Applied Physics Letters, Vol. 79, Issue 17 https://doi.org/10.1063/1.1412591	journal	October 2001
Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors Mizuno, Shinya; Ohno, Yutaka; Kishimoto, Shigeru Japanese Journal of Applied Physics, Vol. 41, Issue Part 1, No. 8 https://doi.org/10.1143/JJAP.41.5125	journal	August 2002
An assessment of wide bandgap semiconductors for power devices Hudgins, J. L.; Simin, G. S.; Santi, E. IEEE Transactions on Power Electronics, Vol. 18, Issue 3 https://doi.org/10.1109/TPEL.2003.810840	journal	May 2003
A Novel Thin Al2O3 Gate Dielectric by ECR-Plasma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors Ootomo, S.; Hashizume, T.; Hasegawa, H. physica status solidi (c), Vol. 0, Issue 1 https://doi.org/10.1002/pssc.200390124	journal	January 2003
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates Dora, Y.; Chakraborty, A.; Mccarthy, L. IEEE Electron Device Letters, Vol. 27, Issue 9, p. 713-715 https://doi.org/10.1109/LED.2006.881020	journal	September 2006
Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack Yafune, Norimasa; Hashimoto, Shin; Akita, Katsushi Japanese Journal of Applied Physics, Vol. 50, Issue 10R https://doi.org/10.7567/JJAP.50.100202	journal	October 2011
Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy Zhang, H.; Miller, E. J.; Yu, E. T. Journal of Applied Physics, Vol. 99, Issue 2 https://doi.org/10.1063/1.2159547	journal	January 2006
High electron mobility transistor based on a GaN‐Al_xGa _1−xN heterojunction Asif Khan, M.; Bhattarai, A.; Kuznia, J. N. Applied Physics Letters, Vol. 63, Issue 9, p. 1214-1215 https://doi.org/10.1063/1.109775	journal	August 1993
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Chowdhury, Srabanti; Swenson, Brian L.; Wong, Man Hoi Semiconductor Science and Technology, Vol. 28, Issue 7 https://doi.org/10.1088/0268-1242/28/7/074014	journal	June 2013
Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy Miller, E. J.; Yu, E. T.; Waltereit, P. Applied Physics Letters, Vol. 84, Issue 4 https://doi.org/10.1063/1.1644029	journal	January 2004
Optimum semiconductors for high-power electronics Shenai, K.; Scott, R. S.; Baliga, B. J. IEEE Transactions on Electron Devices, Vol. 36, Issue 9 https://doi.org/10.1109/16.34247	journal	January 1989
Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions Lin, Zhaojun; Lu, Wu; Lee, Jaesun Applied Physics Letters, Vol. 82, Issue 24 https://doi.org/10.1063/1.1584077	journal	June 2003
AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation Yafune, N.; Akita, K.; Hashimoto, S. Electronics Letters, Vol. 50, Issue 3 https://doi.org/10.1049/el.2013.2846	journal	January 2014
Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs Chung, J. W.; Roberts, J. C.; Piner, E. L. IEEE Electron Device Letters, Vol. 29, Issue 11 https://doi.org/10.1109/LED.2008.2005257	journal	November 2008
AlGaN Channel HEMT With Extremely High Breakdown Voltage Nanjo, Takuma; Imai, Akifumi; Suzuki, Yosuke IEEE Transactions on Electron Devices, Vol. 60, Issue 3 https://doi.org/10.1109/TED.2012.2233742	journal	March 2013
Schottky barrier properties of various metals on n-type GaN Schmitz, A. C.; Ping, A. T.; Khan, M. Asif Semiconductor Science and Technology, Vol. 11, Issue 10 https://doi.org/10.1088/0268-1242/11/10/002	journal	October 1996
Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage Bajaj, Sanyam; Hung, Ting-Hsiang; Akyol, Fatih Applied Physics Letters, Vol. 105, Issue 26 https://doi.org/10.1063/1.4905323	journal	December 2014
GaN-Based RF Power Devices and Amplifiers Mishra, U. K.; Kazior, T. E. Proceedings of the IEEE, Vol. 96, Issue 2 https://doi.org/10.1109/JPROC.2007.911060	journal	February 2008
Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors Miller, E. J.; Dang, X. Z.; Yu, E. T. Journal of Applied Physics, Vol. 88, Issue 10 https://doi.org/10.1063/1.1319972	journal	November 2000
High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate Tokuda, Hirokuni; Hatano, Maiko; Yafune, Norimasa Applied Physics Express, Vol. 3, Issue 12 https://doi.org/10.1143/APEX.3.121003	journal	December 2010
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor Khan, M. A.; Hu, X.; Sumin, G. IEEE Electron Device Letters, Vol. 21, Issue 2 https://doi.org/10.1109/55.821668	journal	February 2000

Cited By (14)

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Tsao, J. Y.; Chowdhury, S.; Hollis, M. A. Advanced Electronic Materials, Vol. 4, Issue 1 https://doi.org/10.1002/aelm.201600501	journal	December 2017
Electronic Transport Properties in AlInGaN/AlGaN Heterostructures Li, Yao; Zhang, Jinfeng; Xue, Junshuai physica status solidi (a), Vol. 215, Issue 7 https://doi.org/10.1002/pssa.201700787	journal	February 2018
High‐Temperature Operation of Al _x Ga _{1− x} N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides Mollah, Shahab; Hussain, Kamal; Floyd, Richard physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900802	journal	February 2020
Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors Klein, Brianna A.; Baca, Albert G.; Lepkowski, Stephan M. Journal of Electronic Materials, Vol. 48, Issue 9 https://doi.org/10.1007/s11664-019-07421-1	journal	July 2019
The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth Bardhan, Abheek; Mohan, Nagaboopathy; Chandrasekar, Hareesh Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5005080	journal	April 2018
AlGaN polarization-doped field effect transistor with compositionally graded channel from Al _0.6 Ga _0.4 N to AlN Armstrong, Andrew M.; Klein, Brianna A.; Baca, Albert G. Applied Physics Letters, Vol. 114, Issue 5 https://doi.org/10.1063/1.5058263	journal	February 2019
Perspective: Ga ₂ O ₃ for ultra-high power rectifiers and MOSFETS Pearton, S. J.; Ren, Fan; Tadjer, Marko Journal of Applied Physics, Vol. 124, Issue 22 https://doi.org/10.1063/1.5062841	journal	December 2018
Enhancement-mode Al _0.85 Ga _0.15 N/Al _0.7 Ga _0.3 N high electron mobility transistor with fluorine treatment Klein, Brianna A.; Douglas, Erica A.; Armstrong, Andrew M. Applied Physics Letters, Vol. 114, Issue 11 https://doi.org/10.1063/1.5064543	journal	March 2019
Thermal conductivity of crystalline AlN and the influence of atomic-scale defects Xu, Runjie Lily; Muñoz Rojo, Miguel; Islam, S. M. Journal of Applied Physics, Vol. 126, Issue 18 https://doi.org/10.1063/1.5097172	journal	November 2019
Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors Razzak, Towhidur; Hwang, Seongmo; Coleman, Antwon Applied Physics Letters, Vol. 115, Issue 4 https://doi.org/10.1063/1.5108529	journal	July 2019
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO ₂ dielectric Mollah, Shahab; Gaevski, Mikhail; Chandrashekhar, Mvs Semiconductor Science and Technology, Vol. 34, Issue 12 https://doi.org/10.1088/1361-6641/ab4781	journal	October 2019
Temperature-Dependent Electrical Characteristics of β-Ga ₂ O ₃ Diodes with W Schottky Contacts up to 500°C Fares, Chaker; Ren, Fan; Pearton, S. J. ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7 https://doi.org/10.1149/2.0011907jss	journal	December 2018
Planar Ohmic Contacts to Al _0.45 Ga _0.55 N/Al _0.3 Ga _0.7 N High Electron Mobility Transistors Klein, B. A.; Baca, A. G.; Armstrong, A. M. ECS Journal of Solid State Science and Technology, Vol. 6, Issue 11 https://doi.org/10.1149/2.0181711jss	journal	January 2017
Thermal Simulations of High Current β-Ga ₂ O ₃ Schottky Rectifiers Sharma, Ribhu; Patrick, Erin; Law, Mark E. ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7 https://doi.org/10.1149/2.0361907jss	journal	January 2019

Similar Records

An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

Journal Article · Mon Jul 18 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:1325715

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; +6 more

Record >10 MV/cm mesa breakdown fields in Al_0.85Ga_0.15N/Al_0.6Ga_0.4N high electron mobility transistors on native AlN substrates

Journal Article · Tue Apr 26 00:00:00 EDT 2022 · Applied Physics Letters · OSTI ID:1325715

Khachariya, Dolar; Mita, Seiji; Reddy, Pramod; +11 more

Al_0.85Ga_0.15N/Al_0.70Ga_0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Journal Article · Sat Dec 09 00:00:00 EST 2017 · ECS Journal of Solid State Science and Technology · OSTI ID:1325715

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; +5 more

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
MODFETs
III-V semiconductors
Schottky barriers
electrical resistivity
leakage currents

Title: An AlN/Al0.85Ga0.15N high electron mobility transistor

Citation Formats

References (26)

Cited By (14)

Similar Records

Related Subjects

Title: An AlN/Al_0.85Ga_0.15N high electron mobility transistor