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Title: Fast process flow, on-wafer interconnection and singulation for MEPV

A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality of metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1341870
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-A
Patent Number(s):
9,559,219
Application Number:
14/745,251
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2015 Jun 19
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Photovoltaic cell fabrication method and panel made thereby
patent, October 1989

Die singulation method and package formed thereby
patent, August 2012

Photovoltaic solar concentrator
patent, December 2012

Photovoltaic solar cell
patent, May 2014

Structured wafer for device processing
patent, May 2014

Structured wafer for device processing
patent, November 2014

Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate
patent, December 2014

Photovoltaic solar cell
patent, September 2015

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