Wafer characteristics via reflectometry and wafer processing apparatus and method
Abstract
An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.
- Inventors:
-
- Denver, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 913249
- Patent Number(s):
- 7238912
- Application Number:
- 10/547,579
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01B - MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Sopori, Bhushan L. Wafer characteristics via reflectometry and wafer processing apparatus and method. United States: N. p., 2007.
Web.
Sopori, Bhushan L. Wafer characteristics via reflectometry and wafer processing apparatus and method. United States.
Sopori, Bhushan L. Tue .
"Wafer characteristics via reflectometry and wafer processing apparatus and method". United States. https://www.osti.gov/servlets/purl/913249.
@article{osti_913249,
title = {Wafer characteristics via reflectometry and wafer processing apparatus and method},
author = {Sopori, Bhushan L},
abstractNote = {An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {7}
}
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