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Title: Wafer characteristics via reflectometry and wafer processing apparatus and method

Abstract

An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.

Inventors:
 [1]
  1. Denver, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
913249
Patent Number(s):
7,238,912
Application Number:
10/547,579
Assignee:
Midwest Research Institute (Kansas City, MO)
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Sopori, Bhushan L. Wafer characteristics via reflectometry and wafer processing apparatus and method. United States: N. p., 2007. Web.
Sopori, Bhushan L. Wafer characteristics via reflectometry and wafer processing apparatus and method. United States.
Sopori, Bhushan L. Tue . "Wafer characteristics via reflectometry and wafer processing apparatus and method". United States. https://www.osti.gov/servlets/purl/913249.
@article{osti_913249,
title = {Wafer characteristics via reflectometry and wafer processing apparatus and method},
author = {Sopori, Bhushan L},
abstractNote = {An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {7}
}

Patent:

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