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Title: High resistivity aluminum antimonide radiation detector

Abstract

Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.

Inventors:
; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175339
Patent Number(s):
6887441
Application Number:
10/260,141
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Sherohman, John W., Coombs, III, Arthur W., and Yee, Jick H. High resistivity aluminum antimonide radiation detector. United States: N. p., 2005. Web.
Sherohman, John W., Coombs, III, Arthur W., & Yee, Jick H. High resistivity aluminum antimonide radiation detector. United States.
Sherohman, John W., Coombs, III, Arthur W., and Yee, Jick H. Tue . "High resistivity aluminum antimonide radiation detector". United States. https://www.osti.gov/servlets/purl/1175339.
@article{osti_1175339,
title = {High resistivity aluminum antimonide radiation detector},
author = {Sherohman, John W. and Coombs, III, Arthur W. and Yee, Jick H.},
abstractNote = {Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {5}
}

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Works referenced in this record:

Annealing and bulk crystal growth of undoped InP under controlled P-pressure: a perspective for the preparation of undoped SI InP?
conference, January 1991


Growth and characterization of doped and undoped AlSb single crystals
journal, August 1990


Preparation of Single‐Phase Crystals of Compounds with Extremely Small Existence Regions
journal, December 1965


Tantalum doping and high resistivity in aluminium antimonide
journal, May 1963


On the growth of AlSb single crystals
journal, April 1989


Semi-insulating InP through wafer annealing
conference, January 1997


Free carrier lifetime in high resistivity aluminium antimonide
journal, May 1967


ALSB as a High-Energy Photon Detector
journal, June 1977