High resistivity aluminum antimonide radiation detector
Abstract
Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175339
- Patent Number(s):
- 6887441
- Application Number:
- 10/260,141
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Citation Formats
Sherohman, John W., Coombs, III, Arthur W., and Yee, Jick H. High resistivity aluminum antimonide radiation detector. United States: N. p., 2005.
Web.
Sherohman, John W., Coombs, III, Arthur W., & Yee, Jick H. High resistivity aluminum antimonide radiation detector. United States.
Sherohman, John W., Coombs, III, Arthur W., and Yee, Jick H. Tue .
"High resistivity aluminum antimonide radiation detector". United States. https://www.osti.gov/servlets/purl/1175339.
@article{osti_1175339,
title = {High resistivity aluminum antimonide radiation detector},
author = {Sherohman, John W. and Coombs, III, Arthur W. and Yee, Jick H.},
abstractNote = {Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {5}
}
Works referenced in this record:
Annealing and bulk crystal growth of undoped InP under controlled P-pressure: a perspective for the preparation of undoped SI InP?
conference, January 1991
- Hirt, G.; Hofmann, D.; Mosel, F.
- [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
Growth and characterization of doped and undoped AlSb single crystals
journal, August 1990
- Lin, C. T.; Schönherr, E.; Bender, H.
- Journal of Crystal Growth, Vol. 104, Issue 3
Preparation of Single‐Phase Crystals of Compounds with Extremely Small Existence Regions
journal, December 1965
- Albers, W.
- The Journal of Chemical Physics, Vol. 43, Issue 12
Tantalum doping and high resistivity in aluminium antimonide
journal, May 1963
- Shaw, D.; McKell, H. D.
- British Journal of Applied Physics, Vol. 14, Issue 5
On the growth of AlSb single crystals
journal, April 1989
- Lin, C. T.; Schönherr, E.; Bender, H.
- Journal of Crystal Growth, Vol. 94, Issue 4
Semi-insulating InP through wafer annealing
conference, January 1997
- Oda, O.; Uchida, M.; Kainosho, K.
- Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
Free carrier lifetime in high resistivity aluminium antimonide
journal, May 1967
- Blamires, Norma G.; Gibbons, P. E.
- Solid State Communications, Vol. 5, Issue 5
Brief communication. Reduction of dislocation density by thermal annealing of (100) gallium antimonide substrates
journal, August 1993
- Heinz, Christian
- International Journal of Electronics, Vol. 75, Issue 2
ALSB as a High-Energy Photon Detector
journal, June 1977
- Yee, Jick H.; Swierkowski, Stefan P.; Sherohman, John W.
- IEEE Transactions on Nuclear Science, Vol. 24, Issue 4