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Title: Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1163749
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA LLNL
Patent Number(s):
8,883,548
Application Number:
13/280,164
Contract Number:
AC52-07NA27344
Resource Relation:
Patent File Date: 2011 Oct 24
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Other works cited in this record:

Lattice matched solar cell and method for manufacturing the same
patent, October 2001

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
journal, March 2002

High-pressure phase transitions in AlSb
journal, April 2001

The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004
  • Kroemer, Herbert
  • Physica E: Low-dimensional Systems and Nanostructures, Vol. 20, Issue 3-4, p. 196-203
  • DOI: 10.1016/j.physe.2003.08.003

AlSb single-crystal grown by HPBM
journal, February 2001
  • Kutny, V. E.; Rybka, A. V.; Abyzov, A. S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 458, Issue 1-2, p. 448-454
  • DOI: 10.1016/S0168-9002(00)01039-1

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