Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

Sherohman, John W; Yee, Jick Hong; Combs, Arthur W

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Title: Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

Abstract

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Inventors:: Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

Issue Date:: 2014-11-11

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1163749

Patent Number(s):: 8883548

Application Number:: 13/280,164

Assignee:: Lawrence Livermore National Security, LLC (Livermore, CA

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02398 - {Antimonides}
H01L21/02549 - {Antimonides}
H01L21/02562 - {Tellurides}
H01L31/0296 - including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L31/02966 - {including ternary compounds, e.g. HgCdTe}
H01L31/0304 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L31/03046 - {including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP}
H01L31/035209 - {comprising a quantum structures}
H01L31/035218 - {the quantum structure being quantum dots}
H01L31/036 - characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/073 - comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L31/0735 - comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L31/075 - the potential barriers being only of the PIN type
H01L31/184 - {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}
H01L31/1844 - {comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P}
H01L31/1864 - {Annealing}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/543 - Solar cells from Group II-VI materials
Y02E10/544 - Solar cells from Group III-V materials
Y02E10/548 - Amorphous silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: AC52-07NA27344

Resource Type:: Patent

Resource Relation:: Patent File Date: 2011 Oct 24

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Sherohman, John W, Yee, Jick Hong, and Combs, III, Arthur W. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications.  United States: N. p., 2014. 
        Web.

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                    Sherohman, John W, Yee, Jick Hong, & Combs, III, Arthur W. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications.  United States.

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                    Sherohman, John W, Yee, Jick Hong, and Combs, III, Arthur W. Tue .  
        "Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications".  United States.  https://www.osti.gov/servlets/purl/1163749.

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@article{osti_1163749,

  title        = {Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications},

  author       = {Sherohman, John W and Yee, Jick Hong and Combs, III, Arthur W},

  abstractNote = {Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {11}

}

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Similar Records

Title: Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

Abstract

Citation Formats

Photoelectrochemical preparation of a solid-state semiconductor photonic device patent, December 1986

Quantum well multijunction photovoltaic cell patent, August 1987

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer patent, March 1998

Alloys and methods for their preparation patent, August 2001

Indium-based alloy and an infrared transducer using such an alloy patent, August 2001

Lattice matched solar cell and method for manufacturing the same patent, October 2001

Thermoelectrically active materials and generators containing them patent, September 2002

Optical device, driving method of optical device and manufacture of optical device patent, October 2002

Wavelength-selective photonics device patent, May 2005

Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate patent, May 2007

High resistivity aluminum antimonide radiation detector patent, December 2007

Method of forming active device on substrate that includes embossing insulating resin layer with metal mold patent, February 2008

Metamorphic buffer on small lattice constant substrates patent, December 2009

InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors patent, December 2009

Thermal oxidation of single crystal aluminum antimonide and materials having the same patent, December 2012

Superlattice fabrication for InAs/GaSb/AISb semiconductor structures patent-application, June 2002

High resistivity aluminum antimonide radiation detector patent-application, April 2004

Isoelectronic surfactant induced sublattice disordering in optoelectronic devices patent-application, April 2004

High efficiency solar cells patent-application, August 2004

High resistivity aluminum antimonide radiation and alpha-particle detector patent-application, May 2005

Discrete and integrated photo voltaic solar cells patent-application, July 2005

High resistivity aluminum antimonide radiation detector patent-application, September 2005

Low bandgap, monolithic, multi-bandgap, optoelectronic devices patent-application, July 2006

Method for making a semiconductor device having a high-k gate dielectric patent-application, August 2006

Design and Fabrication of 6.1-A Family Semiconductor Devices Using Semi-Insulating ALSB Substrate patent-application, June 2007

Development of an electronic device quality aluminum antimonide (AISb) semiconductor for solar cell applications patent-application, June 2007

Room Temperature Aluminum Antimonide Radiation Detector and Methods Thereof patent-application, June 2011

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials journal, March 2002

Stoichiometry-induced roughness on antimonide growth surfaces journal, April 2001

High-pressure phase transitions in AlSb journal, April 2001

The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review journal, January 2004

AlSb single-crystal grown by HPBM journal, February 2001

Photoelectrochemical preparation of a solid-state semiconductor photonic device
patent, December 1986

Quantum well multijunction photovoltaic cell
patent, August 1987

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
patent, March 1998

Alloys and methods for their preparation
patent, August 2001

Indium-based alloy and an infrared transducer using such an alloy
patent, August 2001

Lattice matched solar cell and method for manufacturing the same
patent, October 2001

Thermoelectrically active materials and generators containing them
patent, September 2002

Optical device, driving method of optical device and manufacture of optical device
patent, October 2002

Wavelength-selective photonics device
patent, May 2005

Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate
patent, May 2007

High resistivity aluminum antimonide radiation detector
patent, December 2007

Method of forming active device on substrate that includes embossing insulating resin layer with metal mold
patent, February 2008

Metamorphic buffer on small lattice constant substrates
patent, December 2009

InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors
patent, December 2009

Thermal oxidation of single crystal aluminum antimonide and materials having the same
patent, December 2012

Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
patent-application, June 2002

High resistivity aluminum antimonide radiation detector
patent-application, April 2004

Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
patent-application, April 2004

High efficiency solar cells
patent-application, August 2004

High resistivity aluminum antimonide radiation and alpha-particle detector
patent-application, May 2005

Discrete and integrated photo voltaic solar cells
patent-application, July 2005

High resistivity aluminum antimonide radiation detector
patent-application, September 2005

Low bandgap, monolithic, multi-bandgap, optoelectronic devices
patent-application, July 2006

Method for making a semiconductor device having a high-k gate dielectric
patent-application, August 2006

Design and Fabrication of 6.1-A Family Semiconductor Devices Using Semi-Insulating ALSB Substrate
patent-application, June 2007

Development of an electronic device quality aluminum antimonide (AISb) semiconductor for solar cell applications
patent-application, June 2007

Room Temperature Aluminum Antimonide Radiation Detector and Methods Thereof
patent-application, June 2011

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
journal, March 2002

Stoichiometry-induced roughness on antimonide growth surfaces
journal, April 2001

High-pressure phase transitions in AlSb
journal, April 2001

The $6.1 A ̊$ family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004

AlSb single-crystal grown by HPBM
journal, February 2001