skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

Abstract

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Inventors:
; ;
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1163749
Patent Number(s):
8883548
Application Number:
13/280,164
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Oct 24
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Sherohman, John W, Yee, Jick Hong, and Combs, III, Arthur W. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications. United States: N. p., 2014. Web.
Sherohman, John W, Yee, Jick Hong, & Combs, III, Arthur W. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications. United States.
Sherohman, John W, Yee, Jick Hong, and Combs, III, Arthur W. Tue . "Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications". United States. https://www.osti.gov/servlets/purl/1163749.
@article{osti_1163749,
title = {Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications},
author = {Sherohman, John W and Yee, Jick Hong and Combs, III, Arthur W},
abstractNote = {Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {11}
}

Patent:

Save / Share:

Works referenced in this record:

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
journal, March 2002


Stoichiometry-induced roughness on antimonide growth surfaces
journal, April 2001


High-pressure phase transitions in AlSb
journal, April 2001


The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004


AlSb single-crystal grown by HPBM
journal, February 2001

  • Kutny, V. E.; Rybka, A. V.; Abyzov, A. S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 458, Issue 1-2, p. 448-454
  • https://doi.org/10.1016/S0168-9002(00)01039-1