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Title: Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

Abstract

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Inventors:
; ;
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1163749
Patent Number(s):
8,883,548
Application Number:
13/280,164
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Oct 24
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Sherohman, John W, Yee, Jick Hong, and Combs, III, Arthur W. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications. United States: N. p., 2014. Web.
Sherohman, John W, Yee, Jick Hong, & Combs, III, Arthur W. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications. United States.
Sherohman, John W, Yee, Jick Hong, and Combs, III, Arthur W. Tue . "Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications". United States. https://www.osti.gov/servlets/purl/1163749.
@article{osti_1163749,
title = {Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications},
author = {Sherohman, John W and Yee, Jick Hong and Combs, III, Arthur W},
abstractNote = {Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {11}
}

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Works referenced in this record:

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Stoichiometry-induced roughness on antimonide growth surfaces
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journal, February 2001

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