Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

Sherohman, John W; Yee, Jick Hong; Combs, Arthur W

Title: Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

Abstract

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Inventors:: Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

Issue Date:: 2014-11-11

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1163749

Patent Number(s):: 8883548

Application Number:: 13/280,164

Assignee:: Lawrence Livermore National Security, LLC (Livermore, CA

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/073 - comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L21/02398 - {Antimonides}
H01L31/1864 - {Annealing}
H01L31/075 - the potential barriers being only of the PIN type
H01L31/0735 - comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L31/035209 - {comprising a quantum structures}
H01L31/03046 - {including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/543 - Solar cells from Group II-VI materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1844 - {comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P}
H01L31/184 - {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}
H01L31/02966 - {including ternary compounds, e.g. HgCdTe}
H01L31/0304 - including, apart from doping materials or other impurities, only AIIIBV compounds

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0296 - including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/548 - Amorphous silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/036 - characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/035218 - {the quantum structure being quantum dots}
H01L21/02549 - {Antimonides}
H01L21/02562 - {Tellurides}

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DOE Contract Number:: AC52-07NA27344

Resource Type:: Patent

Resource Relation:: Patent File Date: 2011 Oct 24

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Sherohman, John W, Yee, Jick Hong, and Combs, III, Arthur W. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications.  United States: N. p., 2014. 
        Web.

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                    Sherohman, John W, Yee, Jick Hong, & Combs, III, Arthur W. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications.  United States.

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                    Sherohman, John W, Yee, Jick Hong, and Combs, III, Arthur W. Tue .  
        "Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications".  United States.  https://www.osti.gov/servlets/purl/1163749.

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@article{osti_1163749,

  title        = {Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications},

  author       = {Sherohman, John W and Yee, Jick Hong and Combs, III, Arthur W},

  abstractNote = {Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {11}

}

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Works referenced in this record:

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
journal, March 2002

Biefeld, Robert M.
Materials Science and Engineering: R: Reports, Vol. 36, Issue 4, p. 105-142
https://doi.org/10.1016/S0927-796X(02)00002-5

Stoichiometry-induced roughness on antimonide growth surfaces
journal, April 2001

Bracker, A. S.; Nosho, B. Z.; Barvosa-Carter, W.
Applied Physics Letters, Vol. 78, Issue 17
https://doi.org/10.1063/1.1366360

High-pressure phase transitions in AlSb
journal, April 2001

Hirano, H.; Uehara, S.; Mori, A.
Journal of Physics and Chemistry of Solids, Vol. 62, Issue 5, p. 941-949
https://doi.org/10.1016/S0022-3697(00)00260-2

The $6.1 A ̊$ family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004

Kroemer, Herbert
Physica E: Low-dimensional Systems and Nanostructures, Vol. 20, Issue 3-4, p. 196-203
https://doi.org/10.1016/j.physe.2003.08.003

AlSb single-crystal grown by HPBM
journal, February 2001

Kutny, V. E.; Rybka, A. V.; Abyzov, A. S.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 458, Issue 1-2, p. 448-454
https://doi.org/10.1016/S0168-9002(00)01039-1

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Similar Records

Title: Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

Abstract

Citation Formats

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials journal, March 2002

Stoichiometry-induced roughness on antimonide growth surfaces journal, April 2001

High-pressure phase transitions in AlSb journal, April 2001

The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review journal, January 2004

AlSb single-crystal grown by HPBM journal, February 2001

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
journal, March 2002

Stoichiometry-induced roughness on antimonide growth surfaces
journal, April 2001

High-pressure phase transitions in AlSb
journal, April 2001

The $6.1 A ̊$ family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004

AlSb single-crystal grown by HPBM
journal, February 2001