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Title: Thermal oxidation of single crystal aluminum antimonide and materials having the same

Abstract

In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.

Inventors:
; ; ;
Issue Date:
Research Org.:
National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1082133
Patent Number(s):
8338916
Application Number:
12/976,994
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Sherohman, John William, Yee, Jick Hong, Coombs, III, Arthur William, and Wu, Kuang Jen J. Thermal oxidation of single crystal aluminum antimonide and materials having the same. United States: N. p., 2012. Web.
Sherohman, John William, Yee, Jick Hong, Coombs, III, Arthur William, & Wu, Kuang Jen J. Thermal oxidation of single crystal aluminum antimonide and materials having the same. United States.
Sherohman, John William, Yee, Jick Hong, Coombs, III, Arthur William, and Wu, Kuang Jen J. Tue . "Thermal oxidation of single crystal aluminum antimonide and materials having the same". United States. https://www.osti.gov/servlets/purl/1082133.
@article{osti_1082133,
title = {Thermal oxidation of single crystal aluminum antimonide and materials having the same},
author = {Sherohman, John William and Yee, Jick Hong and Coombs, III, Arthur William and Wu, Kuang Jen J.},
abstractNote = {In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {12}
}

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Works referenced in this record:

Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications
journal, May 1996


Wet thermal oxidation of AlAsSb alloys lattice matched to InP
journal, June 1997


A Rutherford Backscattering Spectroscopic Study of the Aluminum Antimonide Oxidation Process in Air
journal, April 1994


Wet oxidation of AlAsSb alloys catalyzed by methanol
journal, July 2000


ALSB as a High-Energy Photon Detector
journal, June 1977


Suppression of AlSb oxidation with hydrocarbon passivation layer induced by MeV‐He + irradiation
journal, August 1994