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Title: Room temperature aluminum antimonide radiation detector and methods thereof

Abstract

In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25.degree. C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1171651
Patent Number(s):
8969803
Application Number:
12/774,388
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 May 05
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Lordi, Vincenzo, Wu, Kuang Jen J., Aberg, Daniel, Erhart, Paul, Coombs, III, Arthur W, and Sturm, Benjamin W. Room temperature aluminum antimonide radiation detector and methods thereof. United States: N. p., 2015. Web.
Lordi, Vincenzo, Wu, Kuang Jen J., Aberg, Daniel, Erhart, Paul, Coombs, III, Arthur W, & Sturm, Benjamin W. Room temperature aluminum antimonide radiation detector and methods thereof. United States.
Lordi, Vincenzo, Wu, Kuang Jen J., Aberg, Daniel, Erhart, Paul, Coombs, III, Arthur W, and Sturm, Benjamin W. Tue . "Room temperature aluminum antimonide radiation detector and methods thereof". United States. https://www.osti.gov/servlets/purl/1171651.
@article{osti_1171651,
title = {Room temperature aluminum antimonide radiation detector and methods thereof},
author = {Lordi, Vincenzo and Wu, Kuang Jen J. and Aberg, Daniel and Erhart, Paul and Coombs, III, Arthur W and Sturm, Benjamin W},
abstractNote = {In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25.degree. C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {3}
}

Works referenced in this record:

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Suppression of AlSb oxidation with hydrocarbon passivation layer induced by MeV‐He + irradiation
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Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications
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Extrinsic point defects in aluminum antimonide
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Charge carrier scattering by defects in semiconductors
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High resistivity aluminum antimonide radiation detector
patent, May 2005


Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate
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High resistivity aluminum antimonide radiation detector
patent, December 2007


High resistivity aluminum antimonide radiation and alpha-particle detector
patent-application, May 2005


Composite scintillators for detection of ionizing radiation
patent-application, March 2006


Development of an electronic device quality aluminum antimonide (AISb) semiconductor for solar cell applications
patent-application, June 2007