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Title: High resistivity aluminum antimonide radiation detector

Abstract

Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.

Inventors:
 [1];  [2];  [1]
  1. Livermore, CA
  2. (Patterson, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
921073
Patent Number(s):
7309393
Application Number:
11/040,573
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Sherohman, John W, Coombs, III, Arthur W., and Yee, Jick H. High resistivity aluminum antimonide radiation detector. United States: N. p., 2007. Web.
Sherohman, John W, Coombs, III, Arthur W., & Yee, Jick H. High resistivity aluminum antimonide radiation detector. United States.
Sherohman, John W, Coombs, III, Arthur W., and Yee, Jick H. Tue . "High resistivity aluminum antimonide radiation detector". United States. https://www.osti.gov/servlets/purl/921073.
@article{osti_921073,
title = {High resistivity aluminum antimonide radiation detector},
author = {Sherohman, John W and Coombs, III, Arthur W. and Yee, Jick H},
abstractNote = {Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {12}
}

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Works referenced in this record:

Growth and characterization of doped and undoped AlSb single crystals
journal, August 1990


Electron-paramagnetic-resonance study of Se-doped AlSb: Evidence for negative U of the DX center
journal, September 1995


Preparation of Single‐Phase Crystals of Compounds with Extremely Small Existence Regions
journal, December 1965


Tantalum doping and high resistivity in aluminium antimonide
journal, May 1963


On the growth of AlSb single crystals
journal, April 1989


ALSB as a High-Energy Photon Detector
journal, June 1977