Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate
Abstract
Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1165129
- Patent Number(s):
- 8906803
- Application Number:
- 14/063,152
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Oct 25
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING
Citation Formats
Okandan, Murat, and Nielson, Gregory N. Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate. United States: N. p., 2014.
Web.
Okandan, Murat, & Nielson, Gregory N. Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate. United States.
Okandan, Murat, and Nielson, Gregory N. Tue .
"Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate". United States. https://www.osti.gov/servlets/purl/1165129.
@article{osti_1165129,
title = {Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate},
author = {Okandan, Murat and Nielson, Gregory N},
abstractNote = {Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 09 00:00:00 EST 2014},
month = {Tue Dec 09 00:00:00 EST 2014}
}
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Works referencing / citing this record:
Fast process flow, on-wafer interconnection and singulation for MEPV
patent, January 2017
- Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis
- US Patent Document 9,559,219
Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction
patent, May 2015
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